Paper
20 October 2006 Rigorous simulation of 3D masks
Author Affiliations +
Abstract
We perform 3D lithography simulations by using a finite-element solver. To proof applicability to real 3D problems we investigate DUV light propagation through a structure of size 9μm x 4μm x 65nm. On this relatively large computational domain we perform rigorous computations (No Hopkins) taking into account a grid of 11 x 21 source points with two polarization directions each. We obtain well converged results with an accuracy of the diffraction orders of about 1%. The results compare well to experimental aerial imaging results. We further investigate the convergence of 3D solutions towards quasi-exact results obtained with different methods.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sven Burger, Roderick Köhle, Lin Zschiedrich, Hoa Nguyen, Frank Schmidt, Reinhard März, and Christoph Nölscher "Rigorous simulation of 3D masks", Proc. SPIE 6349, Photomask Technology 2006, 63494Z (20 October 2006); https://doi.org/10.1117/12.687816
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Cited by 11 scholarly publications and 5 patents.
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KEYWORDS
Finite element methods

Chemical elements

Photomasks

Computer simulations

Image processing

Lithography

Diffraction

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