Paper
21 March 2008 Resolution, LER, and sensitivity limitations of photoresists
Gregg M. Gallatin, Patrick Naulleau, Dimitra Niakoula, Robert Brainard, Elsayed Hassanein, Richard Matyi, Jim Thackeray, Kathleen Spear, Kim Dean
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Abstract
Recent experimental results and modeling both indicate that whereas it is possible to optimize a photoresist and process to achieve separately a desired resolution or line edge roughness or sensitivity, it will be difficult if not impossible to achieve all three simultaneously using current standard chemically amplified photoresists and processes. This tradeoff among Resolution, Line Edge Roughness (LER) and Sensitivity is termed the RLS tradeoff. Here we review the progress to date of a SEMATECH-funded program to develop an experimentally verified model of the relationship among resolution, LER and sensitivity and use it to determine approaches for "breaking" the RLS tradeoff.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregg M. Gallatin, Patrick Naulleau, Dimitra Niakoula, Robert Brainard, Elsayed Hassanein, Richard Matyi, Jim Thackeray, Kathleen Spear, and Kim Dean "Resolution, LER, and sensitivity limitations of photoresists", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69211E (21 March 2008); https://doi.org/10.1117/12.772763
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Cited by 40 scholarly publications.
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KEYWORDS
Line edge roughness

Data modeling

Extreme ultraviolet

Photoresist materials

Lithography

Image resolution

Scanning electron microscopy

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