Paper
7 March 2008 Enabling technology scaling with "in production" lithography processes
Tejas Jhaveri, Andrzej Strojwas, Larry Pileggi, Vyachelav Rovner
Author Affiliations +
Abstract
As the industry hits a road block with RETs that attempt to aggressively scale k1, we propose to extend the life of optical lithography by a complete co-optimization between circuit choices, layout patterns and lithography. We demonstrate that the judicious selection of a small number of layout patterns along with the appropriate circuit topologies would not only enable k1 relaxation but also efficient implementation of circuits. Additionally, in this paper, we discuss the use of regular design fabrics to extend the life of current generation lithography equipment. We will introduce the Front End of Line (FEOL) limited regular design fabric. The metal 1 patterns for this fabric are selected such that we can utilize a 1.2 NA 32nm metal 1 lithography process without any area penalty with respect to standard cells with conventional design rules, which require a 32nm metal 1 process with a rather unrealistic k1 of 0.35 while using a more advanced 1.35 NA tool. We also demonstrate simulation results on 2-dimensional layout patterns. The results suggest that smart selection of layout patterns can enable the extension of single exposure lithography to a 32nm production lithography process.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tejas Jhaveri, Andrzej Strojwas, Larry Pileggi, and Vyachelav Rovner "Enabling technology scaling with "in production" lithography processes", Proc. SPIE 6924, Optical Microlithography XXI, 69240K (7 March 2008); https://doi.org/10.1117/12.776484
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CITATIONS
Cited by 8 scholarly publications and 1 patent.
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KEYWORDS
Lithography

Metals

Front end of line

Optical lithography

Photomasks

Manufacturing

Optical design

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