Open Access Paper
17 March 2009 EUVL system: moving towards production
Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre van Dijk, Eelco van Setten, John Zimmerman
Author Affiliations +
Abstract
Single exposure lithography is the most cost effective means of achieving critical level exposures, and extreme ultraviolet lithography (EUVL) is the technology that will enable this for 27nm production and below. ASML is actively engaged in the development of a multi generation production EUVL system platform that builds on TWINSCANTM technology and the designs and experience gained from the build, maintenance, and use of the Alpha Demo Tools (ADTs). The ADTs are full field step-and-scan exposure systems for EUVL and are being used at two research centers for EUVL process development by more than 10 of the major semiconductor chip makers, along with all major suppliers of masks and resist. In this paper, we will present our EUVL roadmap, and the manufacturing status of the projection lens for our first production system. Included will also be some test data on the new reticle pods. Experimental results from ADT showing the progress in imaging (28 nm half pitch 1:1 lines/spaces CDU ~10%), single machine overlay down to 3 nm, and resist complete the paper.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Meiling, Nico Buzing, Kevin Cummings, Noreen Harned, Bas Hultermans, Roel de Jonge, Bart Kessels, Peter Kürz, Sjoerd Lok, Martin Lowisch, Joerg Mallman, Bill Pierson, Christian Wagner, Andre van Dijk, Eelco van Setten, and John Zimmerman "EUVL system: moving towards production", Proc. SPIE 7271, Alternative Lithographic Technologies, 727102 (17 March 2009); https://doi.org/10.1117/12.814041
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Cited by 29 scholarly publications.
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KEYWORDS
Extreme ultraviolet lithography

Extreme ultraviolet

Photomasks

Semiconducting wafers

Mirrors

Reticles

Tin

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