EUVL reticle defectivity evaluation

A. Tchikoulaeva; U. Okoroanyanwu; O. Wood; B. La Fontaine; C. Holfeld; S. Kini; M. Peikert; C. Boye; C.-S. Koay; K. Petrillo; H. Mizuno

doi:10.1117/12.815525

17 March 2009 EUVL reticle defectivity evaluation

A. Tchikoulaeva, U. Okoroanyanwu, O. Wood, B. La Fontaine, C. Holfeld, S. Kini, M. Peikert, C. Boye, C.-S. Koay, K. Petrillo, H. Mizuno

Author Affiliations +

Proceedings Volume 7271, Alternative Lithographic Technologies; 727117 (2009) https://doi.org/10.1117/12.815525
Event: SPIE Advanced Lithography, 2009, San Jose, California, United States

Abstract

Reticle defectivity was evaluated using two known approaches: direct reticle inspection and the inspection of the wafer prints. The primary test vehicle was a reticle with a design consisting of 45 nm and 60 nm comb and serpentine structures in different orientations. The reticle was inspected in reflected light on the KLA 587 in a die-todie and a die-to-database mode. Wafers were exposed on a 0.25 NA full-field EUV exposure tool and inspected on a KLA 2800. Both methods delivered two populations of defects which were correlated to identify coinciding detections and mismatches. In addition, reticle defects were reviewed using scanning electron microscopy (SEM) to assess the printability. Furthermore, some images of the defects found on the 45 nm reticle used in the previous study [1] were collected using actinic (EUV) microscopy. The results of the observed mask defects are presented and discussed together with a defect classification.

Citation Download Citation

A. Tchikoulaeva, U. Okoroanyanwu, O. Wood, B. La Fontaine, C. Holfeld, S. Kini, M. Peikert, C. Boye, C.-S. Koay, K. Petrillo, and H. Mizuno "EUVL reticle defectivity evaluation", Proc. SPIE 7271, Alternative Lithographic Technologies, 727117 (17 March 2009); https://doi.org/10.1117/12.815525

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