Paper
1 April 2009 Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses
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Abstract
The use of conventional thermally cross-linked materials in advanced lithography and nano-imprinting techniques, such as negative photo resist, anti reflective coatings and planarizing layers, does not guarantee that a high degree of planarization will be obtained. Additionally, iso-dense thickness biases can create problems by narrowing process latitudes. This presentation focuses on the correlation between simulated and experimental analyses and how planarization is affected. The factors we have identified that influence a material's planarizing capability are; coating spin speed, spin time and the relationship between the solvent concentration of the material and it's via filling properties. Through optimization of these factors, an appreciable reduction in via topography was achieved. Based on our results, novel, UV cross-linkable materials have been developed and optimized for improving planarity in via applications.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Satoshi Takei, Michael W. Lin, Sangwoong Yoon, Tomoya Ohashi, Yasuyuki Nakajima, and C. Grant Willson "Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses", Proc. SPIE 7273, Advances in Resist Materials and Processing Technology XXVI, 72730W (1 April 2009); https://doi.org/10.1117/12.813530
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Cited by 5 scholarly publications.
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KEYWORDS
Ultraviolet radiation

Coating

Lithography

Etching

Semiconducting wafers

Liquids

Antireflective coatings

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