Modeling of charge and discharge in scanning electron microscopy

S. Babin; S. Borisov; A. Ivanchikov

doi:10.1117/12.828575

22 May 2009 Modeling of charge and discharge in scanning electron microscopy

S. Babin, S. Borisov, A. Ivanchikov

Proceedings Volume 7378, Scanning Microscopy 2009; 737818 (2009) https://doi.org/10.1117/12.828575
Event: SPIE Scanning Microscopy, 2009, Monterey, California, United States

Abstract

Calibration of scanning electron microscopy (SEM) for accurate measurement of critical dimensions (CDs) poses a significant problem. Measured CDs depend on the specific SEM setup, as well as the materials and shape of the sample. In addition to systematic errors, charging of the wafer plays an important role in SEM and defect inspection tools. Charging introduces a dynamic component into the linewidth measurement error. CD-SEM calibration can be significantly improved when measurements are complemented by accurate simulations. An advanced Monte-Carlo software, CHARIOT, with an emphasis on low-voltage electrons was developed to simulate image formation in SEM, energy deposition in electron-beam lithography, and charging of a target. Scattering of an electron beam in a microstructure, generation of secondary electrons, and characteristics of the detector, as well as the material and 3D shape of the features, are considered. Physical and mathematical models are described to comply with the accuracy required by modern technology, especially with low-voltage electrons. Examples of CD-SEM simulation in the presence of charging are presented.

Citation Download Citation

S. Babin, S. Borisov, and A. Ivanchikov "Modeling of charge and discharge in scanning electron microscopy", Proc. SPIE 7378, Scanning Microscopy 2009, 737818 (22 May 2009); https://doi.org/10.1117/12.828575

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