Paper
4 April 2011 Lithography aware design optimization using ILT
Jaeyoon Jeong, Seokyun Jeong, Changhoon Ahn, Yongsun Jang, Sukjoo Lee, Thomas Cecil, Donghwan Son, Tatung Chow, David Kim
Author Affiliations +
Abstract
For increasingly small and dense designs requiring adequate DOF, MEEF, and EL, numerous technologies have been employed to increase yield. Some techniques such as process optimization (i.e. SMO) are effective, but can be costly and time consuming, and are not easily modifiable once an initial choice is made. Design optimization can be done separately from knowledge of the fab's OPC correction, but for sub 32nm nodes the complexity and interaction of the design target shapes is becoming too complicated for predefined design rules to produce an acceptable result. In this paper we introduce a method called Lithographically Enhanced Edge Design (LEED) suited for IDMs. This joint target and mask optimization method takes into account the full OPC correction and process, and modifies the user's design in a controlled way so as to produce a new design with improved lithographic performance which can be used in place of the initial design. Control is given to the user so that inter-layer dependencies are not broken. Also, integrated target, mask, and source optimization is available in cases where target and mask optimization in not sufficient to produce adequate results. The use of ILT allows efficient target, mask, and source correction without extensive user OPC scripting and target modification sweeping. We show LEED results which enable production at 20x node.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jaeyoon Jeong, Seokyun Jeong, Changhoon Ahn, Yongsun Jang, Sukjoo Lee, Thomas Cecil, Donghwan Son, Tatung Chow, and David Kim "Lithography aware design optimization using ILT", Proc. SPIE 7974, Design for Manufacturability through Design-Process Integration V, 797409 (4 April 2011); https://doi.org/10.1117/12.879393
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Lithography

Optical proximity correction

Photovoltaics

Source mask optimization

Optical lithography

Detection and tracking algorithms

RELATED CONTENT


Back to Top