Analysis of EUV mask multilayer defect printing characteristics

Andreas Erdmann; Peter Evanschitzky; Tristan Bret; Rik Jonckheere

doi:10.1117/12.916411

22 March 2012 Analysis of EUV mask multilayer defect printing characteristics

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, Rik Jonckheere

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83220E (2012) https://doi.org/10.1117/12.916411
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Defects below and inside multilayers of EUV masks belong to the most critical concerns for the application of EUV lithography in manufacturing processes. These defects are difficult to inspect and to repair. Moreover, they may print at different focus positions. The paper employs fully rigorous electromagnetic field simulations to investigate the printing characteristics of such defects under various process conditions. Selected simulation results are compared to experimental data. Additional simulations demonstrate possible defect repair strategies.

Citation Download Citation

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, and Rik Jonckheere "Analysis of EUV mask multilayer defect printing characteristics", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83220E (22 March 2012); https://doi.org/10.1117/12.916411

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