Dr. Peter Evanschitzky Profile

Dr. Peter Evanschitzky

at Fraunhofer IISB

SPIE Involvement:

Author

Publications (76)

Proceedings Article | 10 April 2024 Presentation + Paper

Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof

Proceedings Volume 12953, 1295302 (2024) https://doi.org/10.1117/12.3009996

KEYWORDS: Photomasks, Light sources and illumination, Source mask optimization, Lithography, Near field, Diffraction

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Proceedings Article | 1 November 2022 Paper

3D mask defect and repair simulation based on SEM images

Vlad Medvedev, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 12472, 1247208 (2022) https://doi.org/10.1117/12.2637978

KEYWORDS: Photomasks, Scanning electron microscopy, Lithography, Feature extraction, 3D image processing

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Proceedings Article | 13 June 2022 Presentation

EUV mask absorber induced best focus shifts

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume PC12051, PC1205108 (2022) https://doi.org/10.1117/12.2614174

KEYWORDS: Extreme ultraviolet, Refractive index, Nanoimprint lithography, High volume manufacturing, Extreme ultraviolet lithography, Diffraction, 3D printing, 3D image processing

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SPIE Journal Paper | 11 May 2022 Open Access

Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky

JM3, Vol. 21, Issue 02, 020901, (May 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.020901

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Phase shifts, Refractive index, Extreme ultraviolet lithography, Resolution enhancement technologies, Deep ultraviolet, Reflectivity, Lithography

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Background: The successful introduction of extreme ultraviolet (EUV) lithography to high volume manufacturing has increased the interest to push this technology to its ultimate limits. This will require photoresist materials, which enable a better tradeoff between resolution, linewidth roughness and sensitivity, and the adaptation of optical resolution enhancements that were originally developed for deep ultraviolet (DUV) lithography. Aim: We review published research on attenuated phase shift masks (attPSM) for EUV with special emphasis on modeling and fundamental understanding of the imaging characteristics of alternative absorber materials. The overview on previous work is intended to summarize typical observations and learning on obtained results and to serve as a reference for further research on this important topic. Review approach: The review starts with a summary of related work on attPSM for DUV lithography. It is shown that the understanding and mitigation of mask topography (or mask 3D) effects is key for the analysis and optimization of attPSM for EUV lithography. Observations from several research groups and application of dedicated modeling approaches help to understand the physical mechanisms behind observed lateral image shifts and pitch-dependent shifts of the best focus position. Results: The imaging physics of attPSM for EUV lithography differs significantly from attPSM imaging in DUV lithography. The “double diffraction” of EUV light from the absorber, the reflection characteristics of the multilayer blank, and the guidance of light through the openings in a low-refractive-index (low-n) absorber introduce important effects that need to be considered in the design and use of attPSM in EUV lithography. It is important to use the optical properties (n and k) and the thickness of the absorber as predictive design parameters of attPSM for EUV lithography (instead of phase and reflectivity). The refractive index of the absorber material is important for binary masks as well. The discussion of low-n absorbers includes both “traditional” attPSM for EUV and low reflectivity absorbers, which exploit the guidance of light inside patterned layers. Conclusions: In-depth modeling investigations of attPSM and first experiments suggest that absorbers with a refractive index around 0.9 (low-n materials) can help to push high NA EUV lithography into the low k1 regime. Comprehensive optimization of source and mask is required to exploit the advantages of low-n absorbers. Further enhancements can help to push EUV imaging to its ultimate limit.

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SPIE Journal Paper | 16 November 2021 Open Access

Accurate prediction of EUV lithographic images and 3D mask effects using generative networks

Abdalaziz Awad, Philipp Brendel, Peter Evanschitzky, Dereje Woldeamanual, Andreas Rosskopf, Andreas Erdmann

JM3, Vol. 20, Issue 04, 043201, (November 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.043201

KEYWORDS: 3D modeling, Photomasks, 3D image processing, Extreme ultraviolet, Data modeling, Lithography, Extreme ultraviolet lithography, Process modeling, Computer programming, 3D acquisition

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Proceedings Article | 12 October 2021 Presentation + Paper

Simulation of polychromatic effects in high NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Qais Saadeh, Victor Soltwisch, Simon Bihr, Jörg Zimmermann, Vicky Philipsen

Proceedings Volume 11854, 1185405 (2021) https://doi.org/10.1117/12.2600931

KEYWORDS: Photomasks, Mirrors, Extreme ultraviolet, Diffraction, Reflectivity, Extreme ultraviolet lithography, Lithography, Phase shifts, Imaging systems

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SPIE Journal Paper | 5 October 2021 Open Access

Mask defect detection with hybrid deep learning network

Peter Evanschitzky, Nicole Auth, Tilmann Heil, Christian Hermanns, Andreas Erdmann

JM3, Vol. 20, Issue 04, 041205, (October 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.4.041205

KEYWORDS: Scanning electron microscopy, Defect detection, Photomasks, Image segmentation, Image processing, Lithography, Network architectures, Image filtering, Machine learning, Image classification

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Proceedings Article | 29 September 2021 Presentation

Pathfinding the perfect EUV mask: understanding the EUV mask using the hybrid mask model

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume 11854, 118540U (2021) https://doi.org/10.1117/12.2601243

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Refractive index, Systems modeling, Reflectivity, Phase shifts, Mirrors, Lithographic illumination, Extreme ultraviolet lithography

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We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and multilayer part. Both parts can be described by real 3D objects or idealized 2D objects. An idealized absorber is specified by the transmission tr and phase of the transmitted light. An idealized multilayer mirror is characterized by a certain reflectivity value, by an angular range or bandwidth (BW) where the light is reflected and by a distance Zeff from the absorber. The diffraction of the incident light by the absorber, the reflection of the diffracted light by the multilayer mirror, and the second diffraction of the reflected light by the absorber are combined by transfer matrices. The obtained superposed diffraction orders provide characteristic diffraction efficiencies and phase values of discrete orders. The presented analysis of the light diffraction from EUV mask and resulting imaging metrics provides several novel insights into the root causes of M3D effects in high NA EUV imaging. The combination of double diffraction by an ideal (thin) absorber and reflection by an ideal (thin) multilayer with a limited reflectivity range (BW <= 15°) explains the peculiarities of the optimum phase of attenuated PSM for EUV. In contrast to phase shift masks for DUV with an optimum phase of 180°, the optimum phase of attenuated phase shift mask for EUV is in the range between 200° and 250°. The optimum value varies with the pitch and a chosen trade-off between large image contrast (normalized image log slope - NILS) and large threshold to size. The real 3D absorber and multilayer contribute to the specific value of the best absorber thickness and phase as well, This finding explains previous observations of this phenomenon. Waveguide effects in real absorbers with low refractive index n are at the basis of the good imaging performance of low n materials. Low n absorber materials exhibit significant sensitivity to illumination direction and feature size. The described double diffraction of light by the absorber introduces characteristic jumps in the optimum bias (and other imaging metrics) versus pitch. The optimized phase/thickness of low n (low k) absorbers can extend the performance of high NA EUV imaging to pitches below 10 nm.

SPIE Journal Paper | 20 May 2021 Open Access

Investigation of waveguide modes in EUV mask absorbers

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

JM3, Vol. 20, Issue 02, 021004, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021004

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Diffraction, Wave propagation, Near field, Nanoimprint lithography, Extreme ultraviolet lithography

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Proceedings Article | 22 February 2021 Presentation

Investigation of waveguide modes in EUV mask absorbers

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

Proceedings Volume 11609, 116090E (2021) https://doi.org/10.1117/12.2587948

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Near field, Nanoimprint lithography, SRAF, Coherence imaging, Binary data

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SPIE Journal Paper | 1 October 2020 Open Access

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer

JM3, Vol. 19, Issue 04, 041001, (October 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.4.041001

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Proceedings Article | 24 March 2020 Presentation

Perspectives and tradeoffs of novel absorber materials for high NA EUV lithography (Conference Presentation)

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer

Proceedings Volume 11323, 1132309 (2020) https://doi.org/10.1117/12.2550882

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Imaging systems, Extreme ultraviolet, Refractive index, Nanoimprint lithography, Reflectivity, Tantalum, Lithographic illumination

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Proceedings Article | 23 March 2020 Presentation + Paper

Pathfinding the perfect EUV mask: the role of the multilayer

H. Mesilhy, P. Evanschitzky, G. Bottiglieri, E. van Setten, T. Fliervoet, A. Erdmann

Proceedings Volume 11323, 1132316 (2020) https://doi.org/10.1117/12.2551870

KEYWORDS: Reflectivity, Multilayers, Photomasks, Extreme ultraviolet, Silicon, Molybdenum, Diffraction, Optimization (mathematics), Lithography, Optical lithography

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Proceedings Article | 27 June 2019 Paper

Mask absorber development to enable next-generation EUVL

Vicky Philipsen, Kim Vu Luong, Karl Opsomer, Laurent Souriau, Jens Rip, Christophe Detavernier, Andreas Erdmann, Peter Evanschitzky, Christian Laubis, Philipp Hönicke, Victor Soltwisch, Eric Hendrickx

Proceedings Volume 11178, 111780F (2019) https://doi.org/10.1117/12.2537967

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Metals, Plasma etching, Etching, Optical properties

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Proceedings Article | 26 March 2019 Presentation + Paper

3D mask effects in high NA EUV imaging

Andreas Erdmann, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet

Proceedings Volume 10957, 109570Z (2019) https://doi.org/10.1117/12.2515678

KEYWORDS: Diffraction, Photomasks, Extreme ultraviolet, 3D modeling, 3D image processing, Lithography, Projection systems

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Proceedings Article | 10 October 2018 Presentation + Paper

Novel EUV mask absorber evaluation in support of next-generation EUV imaging

Vicky Philipsen, Kim Vu Luong, Karl Opsomer, Christophe Detavernier, Eric Hendrickx, Andreas Erdmann, Peter Evanschitzky, Robbert W. van de Kruijs, Zahra Heidarnia-Fathabad, Frank Scholze, Christian Laubis

Proceedings Volume 10810, 108100C (2018) https://doi.org/10.1117/12.2501799

KEYWORDS: Material characterization, Photomasks, Extreme ultraviolet, Metals, Tellurium, Extreme ultraviolet lithography, Refractive index

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In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation-dependent effects on wafer level will consume a significant part of the lithography budget using the current Ta-based mask. Mask absorber optimization can mitigate these so-called mask 3D effects. Thin metal absorbers like Ni and Co have been experimentally investigated due to their high EUV absorption, but they pose challenges on the current technology of subtractive mask patterning [1]. A simulation study of attenuated EUV phase shift masks has identified through multiobjective optimization superior imaging solutions for specific use cases and illumination conditions [2]. Evaluating novel EUV mask absorbers evolves on two levels, demonstrating (1) improvements from lithographic perspective and (2) compatibility with the full mask supply chain including material deposition, absorber patterning, scanner environment compatibility and mask lifetime. On the lithographic level, we have identified regions based on the material optical properties and their gain in imaging performance compared to the reference Ta-based absorber. Within each improvement region we engineered mask absorber materials to achieve both the required imaging capabilities, as well as the technical requirements for an EUV mask absorber. We discuss the material development of Te-based alloys and Ag-based layered structures, because of their high EUV extinction. For the attenuated phase shift materials, we start from a Ru-base material, due to its low refractive index, and construct Ru-alloys. On the experimental level, we examined our novel mask absorber materials against an initial mask absorber requirement list using an experimental test flow. Candidate materials are evaluated on film morphology and stability through thermal, hydrogen, EUV loading, and chemical cleaning, for their EUV optical constants by EUV reflectometry, as well as preliminary for selective dry etch. The careful mask absorber evaluation, combining imaging simulations and experimental material tests, allowed us to narrow down to promising combinations for novel EUV mask absorbers.

SPIE Journal Paper | 11 August 2018 Open Access

Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

JM3, Vol. 18, Issue 01, 011005, (August 2018) https://doi.org/10.1117/12.10.1117/1.JMM.18.1.011005

KEYWORDS: Photomasks, Nanoimprint lithography, Extreme ultraviolet, Phase shifts, Refractive index, Nickel, Ruthenium, Lithography, Reflectivity, Binary data

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Proceedings Article | 29 May 2018 Paper

Simulation study of illumination effects in high-NA EUV lithography

Mohamed Ismail, Peter Evanschitzky, Andreas Erdmann, Gerardo Bottiglieri, Eelco van Setten, Timon Fliervoet

Proceedings Volume 10694, 106940H (2018) https://doi.org/10.1117/12.2315091

KEYWORDS: Photomasks, Nanoimprint lithography, Diffraction, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Lithographic illumination, Imaging systems, Reflectivity, Critical dimension metrology

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Current EUV exposure systems employ a numerical aperture (NA) of 0.33. This relatively small NA is a consequence of geometrical design limitations of all reflective projection systems with a 4 demagnification in the orthogonal x- and y-directions of the image plane. Anamorphic imaging, which employs different demagnification in horizontal (y) and vertical (x) direction can increase the NA to a value of 0.55. The consequences of using anamorphic high-NA imaging system have to be studied by rigorous methods. Since the range of illumination angles of the anamorphic system is different in x and y directions, one way to understand the involved phenomena, is to investigate and compare the impact of illumination angles for both the high-NA 4 8 anamorphic system at 0.55NA and the lower-NA 4 4 system at 0.33NA. We employ fully coherent that is single source point illumination and imaging to study the impact of the illumination direction on the most relevant lithographic metrics. These metrics include the resulting feature size or critical dimension (CD), the feature position, a local contrast or the normalized image log slope (NILS) and the best-focus position of the projected images. In this study, aerial images from a uniformly-distributed grid of 230 illumination positions were computed and analyzed. The results of the simulation study confirmed that larger illumination angles cause more pronounced shadowing effects and significant variations of the position and feature size versus the illumination direction. The larger demagnification direction of the anamorphic system involves a smaller object-side angular spread of the illumination direction, resulting in less pronounced variation of CD and position versus the illumination direction compared to the isomorphic system. Both systems exhibit a drop of the NILS for more oblique angles. However, the larger image side angles of the high-NA system result in more pronounced polarization effects, which reduce the NILS values compared to that of the lower NA system. The high NA achieved by anamorphic imaging increases the importance of 3D mask effects in EUV lithography. It is not a priori known, which of these 3D mask effects can be attributed to the absorber or the multilayer part of the mask. A hybrid mask simulation approach addresses this question. In the second part of this study, simulations using an hybrid of real and ideal mask elements were performed in an attempt to understand their individual effects of the mask elements and which mask element contributes to which of the observed effects.

Proceedings Article | 28 May 2018 Paper

Fourier ptychography for lithography high NA systems

Atoosa Dejkameh, Andreas Erdmann, Peter Evanschitzky, Yasin Ekinci

Proceedings Volume 10694, 106940B (2018) https://doi.org/10.1117/12.2311332

KEYWORDS: Photomasks, Staring arrays, Nanoimprint lithography, Diffraction, Lithography, Phase shifts, Image resolution, Binary data, Imaging systems, Image quality

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Proceedings Article | 19 March 2018 Presentation + Paper

Attenuated PSM for EUV: Can they mitigate 3D mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

Proceedings Volume 10583, 1058312 (2018) https://doi.org/10.1117/12.2299648

KEYWORDS: Photomasks, Refractive index, Nickel, Ruthenium, Phase shifts, Extreme ultraviolet, Lithography, Reflectivity, Thin films

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Proceedings Article | 16 October 2017 Paper

Efficient simulation of EUV pellicles

P. Evanschitzky, A. Erdmann

Proceedings Volume 10450, 104500B (2017) https://doi.org/10.1117/12.2280535

KEYWORDS: Pellicles, Particles, Photomasks, Lithography, Diffraction, Computer simulations, Extreme ultraviolet, Light, Critical dimension metrology, Projection systems

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SPIE Journal Paper | 19 August 2017

Advanced EUV mask and imaging modeling

Peter Evanschitzky, Andreas Erdmann

JM3, Vol. 16, Issue 04, 041005, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041005

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet, Computer simulations, Pellicles, Particles, Systems modeling, Waveguides, Imaging systems, 3D modeling

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SPIE Journal Paper | 1 August 2017

Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter, Eric Hendrickx

JM3, Vol. 16, Issue 04, 041002, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.4.041002

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Proceedings Article | 24 March 2017 Paper

Reducing EUV mask 3D effects by alternative metal absorbers

Vicky Philipsen, Kim Vu Luong, Laurent Souriau, Eric Hendrickx, Andreas Erdmann, Dongbo Xu, Peter Evanschitzky, Robbert W. van de Kruijs, Arash Edrisi, Frank Scholze, Christian Laubis, Mathias Irmscher, Sandra Naasz, Christian Reuter

Proceedings Volume 10143, 1014310 (2017) https://doi.org/10.1117/12.2257929

KEYWORDS: Extreme ultraviolet, Photomasks, Metals, Nickel, Lithography, Extreme ultraviolet lithography, Optical properties, X-ray diffraction, Etching, Cobalt, Refractive index

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SPIE Journal Paper | 1 March 2016

Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Graeupner

JM3, Vol. 15, Issue 02, 021205, (March 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021205

KEYWORDS: Photomasks, Deep ultraviolet, Extreme ultraviolet, Diffraction, Extreme ultraviolet lithography, Refractive index, Lithography, Polarization, Chromium, Monochromatic aberrations

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SPIE Journal Paper | 19 January 2016

Extreme ultraviolet multilayer defect analysis and geometry reconstruction

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

JM3, Vol. 15, Issue 01, 014002, (January 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.1.014002

KEYWORDS: Principal component analysis, Extreme ultraviolet, Photomasks, Databases, Zernike polynomials, Diffraction, Atrial fibrillation, Defect detection, Fourier transforms, Optical filters

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Proceedings Article | 23 September 2015 Paper

Application of Principal Component Analysis to EUV multilayer defect printing

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9630, 96300Y (2015) https://doi.org/10.1117/12.2190784

KEYWORDS: Principal component analysis, Extreme ultraviolet, Photomasks, Neural networks, Databases, Printing, Zernike polynomials, Extreme ultraviolet lithography, Spherical lenses, EUV optics

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Proceedings Article | 18 March 2015 Paper

Mask-induced best-focus-shifts in DUV and EUV lithography

Andreas Erdmann, Peter Evanschitzky, Jens Timo Neumann, Paul Gräupner

Proceedings Volume 9426, 94260H (2015) https://doi.org/10.1117/12.2086346

KEYWORDS: Deep ultraviolet, Extreme ultraviolet, Photomasks, Refractive index, Extreme ultraviolet lithography, Polarization, Electroluminescent displays, Lithography, Optical proximity correction, Monochromatic aberrations

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Proceedings Article | 16 March 2015 Paper

Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9422, 942218 (2015) https://doi.org/10.1117/12.2085468

KEYWORDS: Extreme ultraviolet, Photomasks, Fourier transforms, Neural networks, Phase retrieval, Printing, Lithography, Phase measurement, Optical properties, EUV optics

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SPIE Journal Paper | 2 December 2013

Application of artificial neural networks to compact mask models in optical lithography simulation

Viviana Agudelo, Tim Fühner, Andreas Erdmann, Peter Evanschitzky

JM3, Vol. 13, Issue 01, 011002, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011002

KEYWORDS: Photomasks, Diffraction, Artificial neural networks, Data modeling, Optical lithography, Systems modeling, Lithography, Polarization, Neurons, Optical simulations

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Proceedings Article | 12 April 2013 Paper

Application of artificial neural networks to compact mask models in optical lithography simulation

Viviana Agudelo, Tim Fühner, Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 8683, 868317 (2013) https://doi.org/10.1117/12.2011132

KEYWORDS: Photomasks, Diffraction, Artificial neural networks, Systems modeling, Optical lithography, Lithography, Performance modeling, Imaging systems, Data modeling, Optical simulations

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Proceedings Article | 1 April 2013 Paper

Modeling studies on alternative EUV mask concepts for higher NA

Andreas Erdmann, Tim Fühner, Peter Evanschitzky, Jens Timo Neumann, Johannes Ruoff, Paul Gräupner

Proceedings Volume 8679, 86791Q (2013) https://doi.org/10.1117/12.2011432

KEYWORDS: Photomasks, Image quality standards, Nanoimprint lithography, Lithography, Molybdenum, Binary data, Optical proximity correction, Extreme ultraviolet, Silicon, Multilayers

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Proceedings Article | 1 April 2013 Paper

Modeling strategies for EUV mask multilayer defect dispositioning and repair

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, Rik Jonckheere

Proceedings Volume 8679, 86790Y (2013) https://doi.org/10.1117/12.2011444

KEYWORDS: Photomasks, Printing, Extreme ultraviolet, Lithography, Multilayers, Atomic force microscopy, Semiconducting wafers, Optimization (mathematics), Critical dimension metrology, Systems modeling

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SPIE Journal Paper | 1 March 2013

Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach

Peter Evanschitzky, Feng Shao, Andreas Erdmann

JM3, Vol. 12, Issue 02, 021005, (March 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021005

KEYWORDS: Extreme ultraviolet, Computer simulations, Waveguides, Photomasks, Diffraction, Multilayers, Data modeling, Matrices, Electromagnetism, Finite-difference time-domain method

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Proceedings Article | 18 December 2012 Paper

Imaging characteristics of binary and phase shift masks for EUV projection lithography

Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 8550, 85503K (2012) https://doi.org/10.1117/12.981444

KEYWORDS: Photomasks, Extreme ultraviolet, Phase shifts, Binary data, Extreme ultraviolet lithography, Projection lithography, Imaging systems, Electroluminescent displays, Projection systems, Image processing

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Proceedings Article | 8 November 2012 Paper

Efficient simulation of EUV multilayer defects with rigorous data base approach

Peter Evanschitzky, Feng Shao, Andreas Erdmann

Proceedings Volume 8522, 85221S (2012) https://doi.org/10.1117/12.964282

KEYWORDS: Extreme ultraviolet, Waveguides, Computer simulations, Ions, Diffraction, Neodymium, Photomasks, Cadmium sulfide, Polonium, Data storage

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Proceedings Article | 23 March 2012 Paper

Analysis of EUV mask multilayer defect printing characteristics

Andreas Erdmann, Peter Evanschitzky, Tristan Bret, Rik Jonckheere

Proceedings Volume 8322, 83220E (2012) https://doi.org/10.1117/12.916411

KEYWORDS: Photomasks, Printing, Extreme ultraviolet, Multilayers, Semiconducting wafers, Computer simulations, Critical dimension metrology, Extreme ultraviolet lithography, Reflectivity, Lithography

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Proceedings Article | 13 March 2012 Paper

Mutual source, mask and projector pupil optimization

Tim Fühner, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 8326, 83260I (2012) https://doi.org/10.1117/12.916529

KEYWORDS: Electroluminescence, Projection systems, Optical lithography, Current controlled current source, SRAF, Wavefronts, Monochromatic aberrations, Genetic algorithms, Optimization (mathematics)

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Proceedings Article | 13 March 2012 Paper

Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography

Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner

Proceedings Volume 8326, 832609 (2012) https://doi.org/10.1117/12.916344

KEYWORDS: Photomasks, Diffraction, Optical filters, 3D modeling, Polarization, Calibration, Solids, Projection systems, Immersion lithography, Lithography

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SPIE Journal Paper | 23 February 2012

Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Oliver Rudolph, Peter Evanschitzky, Andreas Erdmann, Eberhard Bär, Jürgen Lorenz

JM3, Vol. 11, Issue 1, 013004, (February 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.1.013004

KEYWORDS: Photomasks, Line width roughness, Spatial frequencies, Electromagnetism, Critical dimension metrology, Near field, Line edge roughness, Waveguides, Lithography, Artificial intelligence

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Proceedings Article | 14 October 2011 Paper

Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes

Oliver Rudolph, Peter Evanschitzky, Andreas Erdmann, Eberhard Bär, Jürgen Lorenz

Proceedings Volume 8166, 81663Z (2011) https://doi.org/10.1117/12.898522

KEYWORDS: Line width roughness, Spatial frequencies, Photomasks, Line edge roughness, Critical dimension metrology, Near field, Waveguides, Artificial intelligence, Lithography, Image analysis

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Proceedings Article | 5 October 2011 Paper

Predictive modeling of EUV-lithography: the role of mask, optics, and photoresist effects

Andreas Erdmann, Peter Evanschitzky, Feng Shao, Tim Fühner, Gian Lorusso, Eric Hendrickx, Mieke Goethals, Rik Jonckheere, Tristan Bret, Thorsten Hofmann

Proceedings Volume 8171, 81710M (2011) https://doi.org/10.1117/12.896813

KEYWORDS: Calibration, Photomasks, Data modeling, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Lithography, Diffusion, Semiconducting wafers, Projection systems

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Proceedings Article | 23 May 2011 Paper

Image simulation of projection systems in photolithography

P. Evanschitzky, T. Fühner, A. Erdmann

Proceedings Volume 8083, 80830E (2011) https://doi.org/10.1117/12.895029

KEYWORDS: Photomasks, Lithography, Diffraction, Projection systems, Computer simulations, Photoresist materials, Imaging systems, Polarization, Semiconducting wafers, Extreme ultraviolet

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Proceedings Article | 23 March 2011 Paper

Compensation of mask induced aberrations by projector wavefront control

Peter Evanschitzky, Feng Shao, Tim Fühner, Andreas Erdmann

Proceedings Volume 7973, 797329 (2011) https://doi.org/10.1117/12.879207

KEYWORDS: Projection systems, Photomasks, Monochromatic aberrations, Wavefronts, Diffraction, Imaging systems, Extreme ultraviolet, Lithography, Semiconducting wafers, EUV optics

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Proceedings Article | 23 March 2011 Paper

Accuracy and performance of 3D mask models in optical projection lithography

Viviana Agudelo, Peter Evanschitzky, Andreas Erdmann, Tim Fühner, Feng Shao, Steffen Limmer, Dietmar Fey

Proceedings Volume 7973, 79730O (2011) https://doi.org/10.1117/12.879053

KEYWORDS: Photomasks, 3D modeling, Diffraction, Polarization, Systems modeling, Performance modeling, Lithography, Lithographic illumination, Projection lithography, Projection systems

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Proceedings Article | 26 May 2010 Paper

Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models

Feng Shao, Peter Evanschitzky, Kristian Motzek, Andreas Erdmann

Proceedings Volume 7748, 774806 (2010) https://doi.org/10.1117/12.866470

KEYWORDS: Waveguides, Photomasks, Critical dimension metrology, Extreme ultraviolet, Computer simulations, Refractive index, Calibration, Printing, Finite-difference time-domain method, Diffraction

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Proceedings Article | 15 May 2010 Paper

Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis

P. Evanschitzky, T. Fühner, F. Shao, A. Erdmann

Proceedings Volume 7545, 75450D (2010) https://doi.org/10.1117/12.863102

KEYWORDS: Photomasks, Extreme ultraviolet, Imaging systems, Computer simulations, Source mask optimization, Waveguides, Diffraction, 3D modeling, 3D image processing, Near field

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Proceedings Article | 15 May 2010 Paper

Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes

Z. Rahimi, A. Erdmann, P. Evanschitzky, C. Pflaum

Proceedings Volume 7545, 75450C (2010) https://doi.org/10.1117/12.863595

KEYWORDS: Photomasks, Diffraction, Computer simulations, Finite-difference time-domain method, Lithography, Near field, Interfaces, Critical dimension metrology, Maxwell's equations, Semiconducting wafers

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SPIE Journal Paper | 1 January 2010

Mask diffraction analysis and optimization for extreme ultraviolet masks

Andreas Erdmann, Peter Evanschitzky, Tim Fühner

JM3, Vol. 9, Issue 01, 013005, (January 2010) https://doi.org/10.1117/12.10.1117/1.3302124

KEYWORDS: Photomasks, Diffraction, Extreme ultraviolet, Refractive index, Monochromatic aberrations, Extreme ultraviolet lithography, Lithographic illumination, Lithography, Wavefronts, Electromagnetism

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SPIE Journal Paper | 1 October 2009

Efficient simulation and optimization of wafer topographies in double patterning

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

JM3, Vol. 8, Issue 04, 043070, (October 2009) https://doi.org/10.1117/12.10.1117/1.3275723

KEYWORDS: Semiconducting wafers, Photomasks, Diffraction, Waveguides, Lithography, Refractive index, Computer simulations, Optical proximity correction, Reflectivity, Photoresist materials

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Proceedings Article | 30 September 2009 Paper

Efficient analysis of three dimensional EUV mask induced imaging artifacts using the waveguide decomposition method

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

Proceedings Volume 7488, 74882C (2009) https://doi.org/10.1117/12.833464

KEYWORDS: Photomasks, Diffraction, Waveguides, Extreme ultraviolet, Optical proximity correction, Extreme ultraviolet lithography, Lithographic illumination, Lithography, 3D image processing, Stereoscopy

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Proceedings Article | 17 June 2009 Paper

Lithography simulation: modeling techniques and selected applications

Andreas Erdmann, Tim Fühner, Feng Shao, Peter Evanschitzky

Proceedings Volume 7390, 739002 (2009) https://doi.org/10.1117/12.829409

KEYWORDS: Lithography, Photomasks, Photoresist materials, Diffraction, Semiconducting wafers, Computer simulations, Double patterning technology, Photoresist developing, Optimization (mathematics), Absorption

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Proceedings Article | 27 May 2009 Paper

Extended Abbe approach for fast and accurate lithography imaging simulations

P. Evanschitzky, A. Erdmann, T. Fühner

Proceedings Volume 7470, 747007 (2009) https://doi.org/10.1117/12.835168

KEYWORDS: Photomasks, Computer simulations, Diffraction, Imaging systems, Lithography, Semiconducting wafers, Polarization, Performance modeling, Systems modeling, Superposition

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Proceedings Article | 18 March 2009 Paper

Mask diffraction analysis and optimization for EUV masks

Andreas Erdmann, Peter Evanschitzky, Tim Fühner

Proceedings Volume 7271, 72711E (2009) https://doi.org/10.1117/12.814119

KEYWORDS: Photomasks, Diffraction, Refractive index, Extreme ultraviolet, Monochromatic aberrations, Extreme ultraviolet lithography, Lithographic illumination, Lithography, Wavefronts, Electromagnetism

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Proceedings Article | 16 March 2009 Paper

Exploration of linear and non-linear double exposure techniques by simulation

John Petersen, Robert Greenway, Tim Fühner, Peter Evanschitzky, Feng Shao, Andreas Erdmann

Proceedings Volume 7274, 72741V (2009) https://doi.org/10.1117/12.814411

KEYWORDS: Remote sensing, Double patterning technology, Optical lithography, Current controlled current source, Superposition, Lithography

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Proceedings Article | 16 March 2009 Paper

Efficient simulation and optimization of wafer topographies in double patterning

Feng Shao, Peter Evanschitzky, Tim Fühner, Andreas Erdmann

Proceedings Volume 7274, 72740O (2009) https://doi.org/10.1117/12.814176

KEYWORDS: Semiconducting wafers, Photomasks, Diffraction, Lithography, Waveguides, Refractive index, Double patterning technology, Optical proximity correction, Reflectivity, Photoresist materials

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Proceedings Article | 17 October 2008 Paper

Benchmark of rigorous methods for electromagnetic field simulations

Sven Burger, Lin Zschiedrich, Frank Schmidt, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 7122, 71221S (2008) https://doi.org/10.1117/12.801248

KEYWORDS: Finite element methods, Photomasks, Near field, Waveguides, Computer simulations, Lithography, Electromagnetism, Diffraction, Cadmium, Interfaces

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Proceedings Article | 17 October 2008 Paper

Simulation-based EUV source and mask optimization

Tim Fühner, Andreas Erdmann, Peter Evanschitzky

Proceedings Volume 7122, 71221Y (2008) https://doi.org/10.1117/12.801436

KEYWORDS: Photomasks, Refractive index, Optimization (mathematics), Reflectivity, Chromium, Extreme ultraviolet, Source mask optimization, Extreme ultraviolet lithography, Lithographic illumination, Genetic algorithms

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Proceedings Article | 19 May 2008 Paper

Optimization of mask absorber stacks and illumination settings for contact hole imaging

Andreas Erdmann, Tim Fühner, Peter Evanschitzky

Proceedings Volume 7028, 70283L (2008) https://doi.org/10.1117/12.793128

KEYWORDS: Photomasks, Lithography, Genetic algorithms, Optimization (mathematics), Polarization, Phase shifts, Binary data, Algorithm development, Computer simulations, Inspection

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Proceedings Article | 2 May 2008 Paper

Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique

Feng Shao, Peter Evanschitzky, David Reibold, Andreas Erdmann

Proceedings Volume 6792, 679206 (2008) https://doi.org/10.1117/12.798519

KEYWORDS: Photomasks, Waveguides, Computer simulations, Extreme ultraviolet, Diffraction, Near field optics, EUV optics, Near field, Electromagnetism, Optical simulations

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Proceedings Article | 1 April 2008 Paper

Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios

Andreas Erdmann, Peter Evanschitzky, Tim Fühner, Thomas Schnattinger, Cheng-Bai Xu, Chuck Szmanda

Proceedings Volume 6924, 692452 (2008) https://doi.org/10.1117/12.772741

KEYWORDS: Semiconducting wafers, Lithography, Refractive index, Double patterning technology, Photomasks, Computer simulations, Optical properties, Photoresist processing, Nonlinear optics, Superposition

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Proceedings Article | 30 October 2007 Paper

Simulation of larger mask areas using the waveguide method with fast decomposition technique

Peter Evanschitzky, Feng Shao, Andreas Erdmann, David Reibold

Proceedings Volume 6730, 67301P (2007) https://doi.org/10.1117/12.746631

KEYWORDS: Computer simulations, 3D image processing, Waveguides, Extreme ultraviolet, Near field, Photomasks, 3D modeling, Near field optics, Electromagnetism, EUV optics

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Proceedings Article | 30 October 2007 Paper

Impact of alternative mask stacks on the imaging performance at NA 1.20 and above

Vicky Philipsen, Kei Mesuda, Peter De Bisschop, Andreas Erdmann, Giuseppe Citarella, Peter Evanschitzky, Robert Birkner, Rigo Richter, Thomas Scherübl

Proceedings Volume 6730, 67301N (2007) https://doi.org/10.1117/12.746678

KEYWORDS: Photomasks, Chromium, Electroluminescence, Semiconducting wafers, Nanoimprint lithography, Tantalum, Lithography, Scanners, Scanning electron microscopy, Resolution enhancement technologies

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SPIE Journal Paper | 1 July 2007

Rigorous electromagnetic field mask modeling and related lithographic effects in the low k1 and ultrahigh numerical aperture regime

Andreas Erdmann, Peter Evanschitzky

JM3, Vol. 6, Issue 03, 031002, (July 2007) https://doi.org/10.1117/12.10.1117/1.2778447

KEYWORDS: Photomasks, Diffraction, Polarization, Refractive index, Lithography, Electromagnetism, Binary data, Water, Lithographic illumination, Critical dimension metrology

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Proceedings Article | 3 May 2007 Paper

Fast near field simulation of optical and EUV masks using the waveguide method

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 6533, 65330Y (2007) https://doi.org/10.1117/12.736978

KEYWORDS: Photomasks, Waveguides, Extreme ultraviolet, Computer simulations, Near field, EUV optics, Near field optics, Imaging systems, Electromagnetism, Diffraction

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Proceedings Article | 27 March 2007 Paper

The impact of the mask stack and its optical parameters on the imaging performance

Andreas Erdmann, Tim Fühner, Sebastian Seifert, Stephan Popp, Peter Evanschitzky

Proceedings Volume 6520, 65201I (2007) https://doi.org/10.1117/12.709351

KEYWORDS: Photomasks, Diffraction, Refractive index, Polarization, Semiconducting wafers, Phase shifts, Lithography, Standards development, Binary data, Imaging systems

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Proceedings Article | 21 June 2006 Paper

Rigorous mask modeling beyond the Hopkins approach

J. Schermer, P. Evanschitzky, A. Erdmann

Proceedings Volume 6281, 62810A (2006) https://doi.org/10.1117/12.692730

KEYWORDS: Photomasks, Lithography, Performance modeling, Projection systems, Diffraction, Image processing, Systems modeling, Source mask optimization, Imaging systems, Integrated modeling

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Proceedings Article | 19 May 2006 Paper

Rigorous mask modeling using waveguide and FDTD methods: an assessment for typical hyper-NA imaging problems

Andreas Erdmann, Peter Evanschitzky, Giuseppe Citarella, Tim Fühner, Peter De Bisschop

Proceedings Volume 6283, 628319 (2006) https://doi.org/10.1117/12.681872

KEYWORDS: Photomasks, Finite-difference time-domain method, Waveguides, Diffraction, Computer simulations, Polarization, Optical proximity correction, Lithography, Electromagnetism, 3D modeling

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Proceedings Article | 15 March 2006 Paper

Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask

Andreas Erdmann, Giuseppe Citarella, Peter Evanschitzky, Hans Schermer, Vicky Philipsen, Peter De Bisschop

Proceedings Volume 6154, 61540G (2006) https://doi.org/10.1117/12.655561

KEYWORDS: Photomasks, Diffraction, Polarization, Computer simulations, Lithography, Projection systems, Data modeling, Finite-difference time-domain method, Optical lithography, Image acquisition

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Proceedings Article | 9 November 2005 Paper

Three dimensional EUV simulations: a new mask near field and imaging simulation system

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 5992, 59925B (2005) https://doi.org/10.1117/12.632071

KEYWORDS: Extreme ultraviolet, Photomasks, Imaging systems, Near field, Finite-difference time-domain method, Polarization, Computer simulations, 3D modeling, Diffraction, Waveguides

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The integrated European research project "More Moore" is designed to push the limits of lithography to enable and exceed the requirements for the 22 nm node. Within the project the lithography group of Fraunhofer IISB is responsible for the development and evaluation of different simulation approaches for a predictive modeling of EUV (extreme ultraviolet) imaging technology for sub 22 nm features. During the first project year two new three dimensional EUV mask simulation models and a new EUV imaging model were developed. For the three dimensional mask near field simulation the modal method by Fourier expansion, developed by the project partner from Centre National de la Recherche Scientifique (CNRS) France, and the waveguide method (WG), developed by Fraunhofer IISB, are available. Both methods are rigorous electromagnetic field solver operating in the frequency domain. A good agreement with the established finite-difference time-domain (FDTD) method and a significantly higher performance compared to FDTD in case of periodic mask structures with rectangular elements can be observed. Additionally the WG method is able to simulate rigorously EUV masks with defective multilayers and with a full consideration of the defect geometry. The imaging model is characterized by a Jones pupil based representation of the imaging system and by a completely vectorial description of the light propagation, taking into account important polarization dependent effects like source polarization effects, mask topography polarization effects and effects resulting from light propagation in multilayer systems. This paper will present the new three dimensional WG method for the EUV mask near field simulation in combination with the vectorial imaging system and in comparison to our FDTD reference method. Typical 2D and 3D mask structures and new EUV mask concepts like phase shift masks with etched multilayers in combination with defect free and defective multilayers stacks are simulated exemplarily. Additionally aerial images and image CDs resulting from the two different simulation approaches (WG and FDTD) are compared as well as the mask near fields, the computation time, and the convergence.

Proceedings Article | 12 May 2005 Paper

Mask and wafer topography effects in immersion lithography

Andreas Erdmann, Peter Evanschitzky, Peter De Bisschop

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599416

KEYWORDS: Photomasks, Diffraction, Semiconducting wafers, Lithography, Immersion lithography, Computer simulations, Polarization, Photoresist materials, Liquids, Near field optics

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Proceedings Article | 2 June 2004 Paper

The impact of EUV mask defects on lithographic process performance

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 5504, (2004) https://doi.org/10.1117/12.568013

KEYWORDS: Photomasks, Extreme ultraviolet, Multilayers, Reflectivity, Near field, 3D modeling, Computer simulations, Image compression, Semiconducting wafers, Extreme ultraviolet lithography

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Proceedings Article | 20 May 2004 Paper

Enhanced model for the efficient 2D and 3D simulation of defective EUV masks

Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.533217

KEYWORDS: Photomasks, Extreme ultraviolet, Near field, Waveguides, Finite-difference time-domain method, 3D modeling, Computer simulations, Multilayers, Diffraction, Lithography

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Proceedings Article | 17 December 2003 Paper

EUV mask simulation for AIMS

Roman Windpassinger, Norbert Rosenkranz, Thomas Scherubl, Peter Evanschitzky, Andreas Erdmann, Axel Zibold

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518053

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Imaging systems, Lithographic illumination, Reticles, EUV optics, Wafer-level optics

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Proceedings Article | 17 December 2003 Paper

Rigorous simulation of defective EUV multilayer masks

Christoph Sambale, Thomas Schmoeller, Andreas Erdmann, Peter Evanschitzky, Christian Kalus

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518049

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Multilayers, Near field, Finite-difference time-domain method, Extreme ultraviolet lithography, 3D modeling, Image segmentation, Lithography

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Proceedings Article | 28 August 2003 Paper

Simulation of extreme ultraviolet masks with defective multilayers

Peter Evanschitzky, Andreas Erdmann, Maxime Besacier, Patrick Schiavone

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504075

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet, Multilayers, 3D modeling, Finite-difference time-domain method, Diffraction, Near field, Computer simulations, Extreme ultraviolet lithography

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Showing 5 of 76 publications

Conference Committee Involvement (5)

Modeling Aspects in Optical Metrology IX

26 June 2023 | Munich, Germany

Modeling Aspects in Optical Metrology VIII

21 June 2021 | Online Only, Germany

Modeling Aspects in Optical Metrology VII

24 June 2019 | Munich, Germany

Modeling Aspects in Optical Metrology

26 June 2017 | Munich, Germany

Modeling Aspects in Optical Metrology V

23 June 2015 | Munich, Germany

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