Joint calibration of 3D resist image and CDSEM

C. S. Chou; Y. Y. He; Y. P. Tang; Y. T. Chang; W. C. Huang; R. G. Liu; T. S. Gau

doi:10.1117/12.2010846

10 April 2013 Joint calibration of 3D resist image and CDSEM

C. S. Chou, Y. Y. He, Y. P. Tang, Y. T. Chang, W. C. Huang, R. G. Liu, T. S. Gau

Proceedings Volume 8681, Metrology, Inspection, and Process Control for Microlithography XXVII; 868113 (2013) https://doi.org/10.1117/12.2010846
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Traditionally, an optical proximity correction model is to evaluate the resist image at a specific depth within the photoresist and then extract the resist contours from the image. Calibration is generally implemented by comparing resist contours with the critical dimensions (CD). The wafer CD is usually collected by a scanning electron microscope (SEM), which evaluates the CD based on some criterion that is a function of gray level, differential signal, threshold or other parameters set by the SEM. However, the criterion does not reveal which depth the CD is obtained at. This depth inconsistency between modeling and SEM makes the model calibration difficult for low k₁ images. In this paper, the vertical resist profile is obtained by modifying the model from planar (2D) to quasi-3D approach and comparing the CD from this new model with SEM CD. For this quasi-3D model, the photoresist diffusion along the depth of the resist is considered and the 3D photoresist contours are evaluated. The performance of this new model is studied and is better than the 2D model.

Citation Download Citation

C. S. Chou, Y. Y. He, Y. P. Tang, Y. T. Chang, W. C. Huang, R. G. Liu, and T. S. Gau "Joint calibration of 3D resist image and CDSEM", Proc. SPIE 8681, Metrology, Inspection, and Process Control for Microlithography XXVII, 868113 (10 April 2013); https://doi.org/10.1117/12.2010846

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