Analysis of mix-and-match litho approach for manufacturing 20nm logic-node products

Yayi Wei; Chao Zhao; Tianchun Ye

doi:10.1117/12.2046095

28 March 2014 Analysis of mix-and-match litho approach for manufacturing 20nm logic-node products

Yayi Wei, Chao Zhao, Tianchun Ye

Proceedings Volume 9049, Alternative Lithographic Technologies VI; 90491Y (2014) https://doi.org/10.1117/12.2046095
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Due to resolution limitation of 1.35NA 193nm immersion lithography, double-exposure and double-patterning (DP) are widely used in 20nm logic process. We propose to replace these DP layers with multi e-beam lithography, i.e. combining two photo masks into one e-beam exposure layer. Our analysis suggests that current multi e-beam tool has the resolution capability to expose these combined layers. The major concern is the mix-and-match overlay, which should be addressed by further improvement of alignment hardware and establishment of an advanced process control system. We believe that the mixing of e-beam and photolithography offers an alternative lithography solution for manufacturing 20nm logic products in small volume.

Citation Download Citation

Yayi Wei, Chao Zhao, and Tianchun Ye "Analysis of mix-and-match litho approach for manufacturing 20nm logic-node products", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491Y (28 March 2014); https://doi.org/10.1117/12.2046095

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