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1 January 1988 Overlay Simulator For Wafer Steppers
William H. Arnold
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Proceedings Volume 0922, Optical/Laser Microlithography; (1988) https://doi.org/10.1117/12.968406
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States
Abstract
The impact of wafer stepper overlay errors on device yields and design rules are studied. First, the classical Lynch model for normally distributed sizing and overlay errors is reformulated for orthogonal geometries. Then the distribution of overlay errors in the linear Perloff model describing global alignment is derived. Finally, a Monte Carlo program, OVS, for simulating stepper overlay errors is introduced. OVS is used to determine the impact of individual component errors, such as those due to lens distortion or to mask making, on the overall distribution of errors.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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William H. Arnold "Overlay Simulator For Wafer Steppers", Proc. SPIE 0922, Optical/Laser Microlithography, (1 January 1988); https://doi.org/10.1117/12.968406
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KEYWORDS
Semiconducting wafers
Optical alignment
Reticles
Overlay metrology
Tolerancing
Monte Carlo methods
Distortion
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