CONFERENCE PROCEEDINGS
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Christian Stief
at Applied Materials GmbH
SPIE Involvement:
Author
Publications (5)
Proceedings Article | 24 March 2006 Paper
Automatic CD-SEM offline recipe creation for OPC qualification and process monitoring in a DRAM pilot-fab environment
Uwe Kramer, Thomas Marschner, Dieter Kaiser, Marc Winking, Christian Stief, Stefano Ventola, Dan Lewitzki, Zamir Abraham, Ovadya Menadeva, Sam Shukrun
Proceedings Volume 6152, 61520L (2006) https://doi.org/10.1117/12.654787
KEYWORDS: Optical proximity correction, Semiconducting wafers, Pattern recognition, Computer aided design, Scanning electron microscopy, Image processing, Time metrology, Photomasks, Manufacturing, Inspection
Proceedings Article | 10 May 2005 Paper
Impact of averaging of CD-SEM measurements on process stability in a full volume DRAM production environment
Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.598426
KEYWORDS: Critical dimension metrology, Semiconducting wafers, Etching, Process control, Metrology, Precision measurement, Photomasks, Feedback loops, Feedback control, Environmental sensing
SPIE Journal Paper | 1 January 2005
Characterization of 193-nm resist layers by critical dimension-scanning electron microscopy sidewall imaging
JM3, Vol. 4, Issue 01, 013007, (January 2005) https://doi.org/10.1117/12.10.1117/1.1857534
KEYWORDS: Electron microscopy, Atomic force microscopy, 3D metrology, Line edge roughness, Reconstruction algorithms, Scanners, Finite element methods, Photoresist processing, Critical dimension metrology, Process control
Proceedings Article | 24 May 2004 Paper
193-nm resist roughness characterization and process propagation investigation using a CD-SEM
Thomas Marschner, Anice Lee, Stefan Fuchs, Lars Voelkel, Christian Stief
Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.535214
KEYWORDS: Line edge roughness, Semiconducting wafers, Spatial frequencies, Etching, Photoresist processing, Line width roughness, Lithography, Critical dimension metrology, Reticles, Molybdenum
Proceedings Article | 2 June 2003 Paper
Characterization of 193-nm resist layers by CD-SEM sidewall imaging
Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.482808
KEYWORDS: 3D metrology, Atomic force microscopy, Scanning electron microscopy, Silicon, Deep ultraviolet, Line edge roughness, Process control, Scanners, Finite element methods, 3D image processing
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