Electron beam lithography (EBL) will be used to pattern an Extreme Ultraviolet (EUV) mask. Both forward scattering
electrons and backscattering electrons contribute to the energy deposition in resist, which is directly related to the pattern
profile. When the exposure conditions, development conditions and the thickness and material of absorber, buffer,
capping, and substrate are determined, the structure of molybdenum/silicon (Mo/Si) multilayer become the exclusive
factor to influent the EUV mask fabrication. Several researchers have investigated the influence of the number of
repeated Mo/Si layer and their thickness on the backscattering coefficient and the deposited energy in the resist.
However the secondary electron generation and tracking is not implemented. Furthermore, the characters of pattern
profile were not analyzed. In this paper, EBL module of in house software MicroCruiser, which included the secondary
electrons and relativistic correction of high energy electron, was used to study the impact of structure of Mo/Si
multilayer on the mask fabrication by EBL. Energy distribution in resist, backscattering coefficient (BSC), and the
pattern profile had been investigated. The results show that with the number of Mo/Si repeated layers increases, the BSC
decrease and the line edge of pattern profile is much smoother.
EUVL will be a most likely candidate for the next generation lithography beyond 32nm node. The proper material of
Extreme Ultraviolet (EUV) mask absorber is crucial. Many researches indicated that tantalum-nitrogen (TaN) and
chromium (Cr) are the better candidates. However, these studies mainly focus on the optical performance. Researchers
pay little attention to the influence of absorber material on mask fabrication by Electron Beam Lithography (EBL). In
this paper, using an EBL module of in house software MicroCruiser, the study of comparison of the influence of TaN
and Cr absorber on EUV mask fabrication is presented from the perspective of the backscattering coefficient, the energy
deposition of BE in resist, the line edge roughness of patter profile, and the side wall angle of the pattern profile,
respectively. An EBL module of MicroCruiser is developed including complex inelastic scattering and relativistic
correction of high energy electron which were not considered in previous simulation software of EBL.
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