Dr. Justin C. Goodrich Profile

Dr. Justin C. Goodrich

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Publications (6)

Proceedings Article | 6 March 2021 Presentation

Band structures and heterojunction alignment of ScAlN alloy

Hanlin Fu, Justin Goodrich, Nelson Tansu

Proceedings Volume 11686, 1168623 (2021) https://doi.org/10.1117/12.2579138

KEYWORDS: Heterojunctions, Optical alignment, Gallium nitride, Optoelectronic devices, Aluminum nitride, Semiconductors, Quantum wells, Crystals

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Proceedings Article | 5 March 2021 Presentation

Efficient hole-doping in dilute-anion III-nitrides

Justin Goodrich, Damir Borovac, Chee-Keong Tan, Nelson Tansu

Proceedings Volume 11686, 116861O (2021) https://doi.org/10.1117/12.2578892

KEYWORDS: Doping, Ionization, Aluminum nitride, Optoelectronics, Optoelectronic devices, Energy efficiency

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Proceedings Article | 5 March 2021 Presentation

Dilute-As InGaNAs quantum wells for red-emitting laser active regions

Hanlin Fu, Wei Sun, Justin Goodrich, Damir Borovac, Nelson Tansu

Proceedings Volume 11705, 117050F (2021) https://doi.org/10.1117/12.2578751

KEYWORDS: Quantum wells, Laser damage threshold, Indium gallium nitride, Gallium nitride, Chemical species, Arsenic, Optoelectronics, Nitrogen, Crystals

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Proceedings Article | 10 March 2020 Presentation

Structural and electrical properties of MgO on GaN by thermal atomic layer deposition (Conference Presentation)

Justin Goodrich, Onoriode Ogidi-Ekoko, Thomas Farinha, Alexandra Howzen, Animesh Kundu, Jonathan Wierer, Nicholas Strandwitz, Nelson Tansu

Proceedings Volume 11281, 112811R (2020) https://doi.org/10.1117/12.2548753

KEYWORDS: Gallium nitride, Atomic layer deposition, Oxides, Dielectrics, Thin films, Crystals, Semiconductors, Magnesium, Molecular beam epitaxy, Semiconducting wafers

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Proceedings Article | 10 March 2020 Presentation

Optical and crystallinity properties of lattice-matched AlGaInN on GaN (Conference Presentation)

Justin Goodrich, Hanlin Fu, Damir Borovac, Nelson Tansu

Proceedings Volume 11280, 1128005 (2020) https://doi.org/10.1117/12.2548752

KEYWORDS: Crystal optics, Gallium nitride, Crystals, Aluminum, Gallium, Optoelectronic devices, Heterojunctions, Metalorganic chemical vapor deposition, Luminescence, Spectroscopic ellipsometry

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Proceedings Article | 9 March 2020 Presentation

InGaN/AlGaInN quantum wells for low-threshold laser active region (Conference Presentation)

Hanlin Fu, Damir Borovac, Justin Goodrich, Onoriode Ogidi-Ekoko, Nelson Tansu

Proceedings Volume 11301, 1130103 (2020) https://doi.org/10.1117/12.2548652

KEYWORDS: Indium gallium nitride, Quantum wells, Gallium nitride, Optoelectronics, Optoelectronic devices, Heterojunctions, Luminescence

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Showing 5 of 6 publications

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