Dr. Shinya Minegishi Profile

Dr. Shinya Minegishi

at EUVL Infrastructure Development Ctr Inc

SPIE Involvement:

Author

Publications (14)

Proceedings Article | 1 April 2016 Paper

Sub-10nm lines and spaces patterning using grapho-epitaxial directed self-assembly of lamellar block copolymers

Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Shinya Minegishi, Ken Miyagi, Hitoshi Kubota, Hideki Kanai, Katsuyoshi Kodera, Masayuki Shiraishi, Naoko Kihara, Yoshiaki Kawamonzen, Toshikatsu Tobana, Katsutoshi Kobayashi, Hitoshi Yamano, Tsukasa Azuma, Satoshi Nomura

Proceedings Volume 9777, 97771T (2016) https://doi.org/10.1117/12.2218787

KEYWORDS: Optical lithography, Metals, Photoresist processing, Semiconductor manufacturing, Semiconductors, Manufacturing, Epitaxy, Semiconducting wafers, Scanning electron microscopy, Silica, Directed self assembly, Etching, Photomasks, Electron beam lithography, Chemical mechanical planarization, Reactive ion etching, Metrology, Tin

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Proceedings Article | 1 April 2016 Paper

Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer

Hironobu Sato, Yusuke Kasahara, Naoko Kihara, Yuriko Seino, Ken Miyagi, Shinya Minegishi, Hitoshi Kubota, Katsutoshi Kobayashi, Hideki Kanai, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Masayuki Shiraishi, Hitoshi Yamano, Satoshi Nomura, Tsukasa Azuma, Teruaki Hayakawa

Proceedings Volume 9777, 97771S (2016) https://doi.org/10.1117/12.2218758

KEYWORDS: Molecular self-assembly, Polymers, Etching, Directed self assembly, Transmission electron microscopy, Silicon, Electron microscopes, Surface properties, Lithography, Reactive ion etching

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Proceedings Article | 23 March 2016 Paper

Reactive ion etching challenges for half-pitch sub-10-nm line-and-space pattern fabrication using directed self-assembly lithography

Yusuke Kasahara, Yuriko Seino, Hironobu Sato, Hitoshi Kubota, Hideki Kanai, Naoko Kihara, Shinya Minegishi, Ken Miyagi, Toshikatsu Tobana, Masayuki Shiraishi, Katsutoshi Kobayashi, Katsuyoshi Kodera, Hitoshi Yamano, Yoshiaki Kawamonzen, Tsukasa Azuma

Proceedings Volume 9782, 97820P (2016) https://doi.org/10.1117/12.2219081

KEYWORDS: Reactive ion etching, Optical lithography, Polymers, Lithography, Semiconductor manufacturing, Silicon, Metals, Semiconductors, Manufacturing, Directed self assembly, Photomasks, Scanning electron microscopy, Silica, Chemical mechanical planarization

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Proceedings Article | 18 March 2016 Paper

EUV resist outgassing analysis for the new platform resists at EIDEC

Eishi Shiobara, Yukiko Kikuchi, Shinji Mikami, Takeshi Sasami, Takashi Kamizono, Shinya Minegishi, Takakazu Kimoto, Toru Fujimori, Takeo Watanabe, Tetsuo Harada, Hiroo Kinoshita, Satoshi Tanaka

Proceedings Volume 9776, 97762H (2016) https://doi.org/10.1117/12.2219424

KEYWORDS: Contamination, Extreme ultraviolet, Extreme ultraviolet lithography, Metals, Hydrogen, Chemical elements, Mirrors, Reflectivity, Zirconium, Aluminum, Silicon, Germanium

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The suppression of outgassing from the EUV resist is one of the significant challenges, which has to be addressed for realizing EUV lithography (EUVL). The outgassing might be the main contributor involved in the contamination of the mirror optics in scanners. This may result in reflectivity losses. The pragmatic outgassing test that utilizes the witness sample (WS) was used as a general method to quantify the outgassing level for commercially available chemically amplified resists (CAR). There are two types of contaminations. The first type of contamination involves a cleanable contamination that mainly comprises hydrocarbons that can be removed by the hydrogen radical cleaning. Another type of contamination includes the noncleanable contamination that remains on the WS even after hydrogen radical cleaning. Several outgas qualification results were evaluated at the EIDEC [1, 2]. The data indicated that contaminations by the CAR mainly comprised the cleanable contaminations. The data also indicated that there were almost negligible noncleanable contaminations from the CAR. EUV resist communities accelerate the development of high sensitivity resists to compensate the low power of the EUV source. Nonchemically amplified resist (nonCAR) with a new platform is a candidate for high sensitivity resists. The nonCAR includes some types of metal elements with high absorbance for EUV light. There is very limited research on the outgassing characteristics of the nonCAR. In this study, we considered an EUV exposure process in the actual EUV scanner and EUV resists were exposed in a hydrogen environment. A potential risk could result from the reaction of the hydrogen radicals generated by the EUV light with the metal elements in the nonCAR and the metal hydride outgases from the resist. This would result in a noncleanable contamination on the EUV mirror [3]. The knowledge with respect to outgassing from an organic metal complex is insufficient even in a vacuum condition. Hence, the study involved the preparation of certain types of organic metal complexes as model materials. Then, the outgassing evaluations for the materials were carried out as a fundamental studies in a vacuum condition. The results were reported in this study.

Proceedings Article | 18 March 2016 Paper

Novel ultra-high sensitive 'metal resist' for EUV lithography

Toru Fujimori, Toru Tsuchihashi, Shinya Minegishi, Takashi Kamizono, Toshiro Itani

Proceedings Volume 9776, 977605 (2016) https://doi.org/10.1117/12.2219056

KEYWORDS: Extreme ultraviolet lithography, Metals, Extreme ultraviolet, Lithography, Manufacturing, Chemically amplified resists, Chemistry, Line width roughness, System on a chip, Standards development, Silicon, Semiconducting wafers

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SPIE Journal Paper | 9 April 2015 Open Access

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

Naoko Kihara, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Hideki Kanai, Yoshiaki Kawamonzen, Katsuyoshi Kodera, Tsukasa Azuma, Teruaki Hayakawa

JM3, Vol. 14, Issue 02, 023502, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.023502

KEYWORDS: Etching, Polymethylmethacrylate, Optical lithography, Silicon, Polymers, Lithography, Scanning electron microscopy, Image processing, Polymerization, Directed self assembly

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Proceedings Article | 20 March 2015 Paper

The effect of resist material composition on development behavior

Shinya Minegishi, Toshiro Itani

Proceedings Volume 9425, 94251I (2015) https://doi.org/10.1117/12.2085820

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Photoresist processing, Extreme ultraviolet, Electron beam lithography, Line width roughness, Atomic force microscopy, Lithography, Electron beams, Stochastic processes

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Proceedings Article | 19 March 2015 Paper

Directed self-assembly lithography using coordinated line epitaxy (COOL) process

Yuriko Seino, Yusuke Kasahara, Hironobu Sato, Katsutoshi Kobayashi, Hitoshi Kubota, Shinya Minegishi, Ken Miyagi, Hideki Kanai, Katsuyoshi Kodera, Naoko Kihara, Yoshiaki Kawamonzen, Toshikatsu Tobana, Masayuki Shiraishi, Satoshi Nomura, Tsukasa Azuma

Proceedings Volume 9423, 942316 (2015) https://doi.org/10.1117/12.2085697

KEYWORDS: Etching, Picosecond phenomena, Lithography, Semiconducting wafers, Reactive ion etching, Metals, Scanning electron microscopy, Photoresist processing, Optical alignment, Directed self assembly

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Proceedings Article | 17 March 2015 Paper

RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process

Y. Kasahara, Y. Seino, K. Kobayashi, H. Kanai, H. Sato, H. Kubota, T. Tobana, S. Minegishi, K. Miyagi, N. Kihara, K. Kodera, M. Shiraishi, Y. Kawamonzen, S. Nomura, T. Azuma

Proceedings Volume 9428, 94280S (2015) https://doi.org/10.1117/12.2085704

KEYWORDS: Reactive ion etching, Optical lithography, Lithography, Etching, Epitaxy, Picosecond phenomena, Scanning electron microscopy, Silica, Semiconducting wafers, Directed self assembly

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Proceedings Article | 13 March 2015 Paper

Collaborative work on reducing the intersite gaps in outgassing qualification

Soichi Inoue, Eishi Shiobara, Takeshi Sasami, Isamu Takagi, Yukiko Kikuchi, Toru Fujimori, Shinya Minegishi, Robert Berg, Thomas Lucatorto, Shannon Hill, Charles Tarrio, Ivan Pollentier, Yen-Chih Lin, Yu-Jen Fan, Dominic Ashworth

Proceedings Volume 9422, 942212 (2015) https://doi.org/10.1117/12.2085700

KEYWORDS: Semiconducting wafers, Contamination, Picosecond phenomena, Temperature metrology, Extreme ultraviolet, Molecules, Extreme ultraviolet lithography, Electron beams, Standards development, Lithography

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Proceedings Article | 13 March 2015 Paper

Analysis of EUV resist outgassing depended on the dosage

E. Shiobara, I. Takagi, Y. Kikuchi, T. Sasami, S. Minegishi, T. Fujimori, T. Watanabe, T. Harada, H. Kinoshita, S. Inoue

Proceedings Volume 9422, 942210 (2015) https://doi.org/10.1117/12.2085692

KEYWORDS: Contamination, Extreme ultraviolet lithography, Extreme ultraviolet, Mirrors, Reflectivity, Systems modeling, Spectroscopy, Data modeling, Scanners, EUV optics

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Proceedings Article | 28 March 2014 Paper

Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory

Katsuyoshi Kodera, Hironobu Sato, Hideki Kanai, Yuriko Seino, Naoko Kihara, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, Tsukasa Azuma

Proceedings Volume 9049, 904926 (2014) https://doi.org/10.1117/12.2046159

KEYWORDS: Monte Carlo methods, Lithography, Particles, Thin film coatings, Systems modeling, Computer simulations, Image segmentation, Extreme ultraviolet lithography, Semiconductors, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Polymer blends for directed self-assembly

Yuuji Namie, Yusuke Anno, Takehiko Naruoka, Shinya Minegishi, Tomoki Nagai, Yoshi Hishiro, Yoshikazu Yamaguchi

Proceedings Volume 8680, 86801M (2013) https://doi.org/10.1117/12.2011418

KEYWORDS: Polymers, Optical lithography, Photoresist materials, Annealing, Lithography, Materials processing, Photoresist developing, Directed self assembly, Interfaces, Photoresist processing

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Proceedings Article | 26 March 2008 Paper

Low out-gassing organic spin-on hardmask

Shinya Minegishi, Nakaatsu Yoshimura, Mitsuo Sato, Yousuke Konno, Keiji Konno, Mark Slezak, Junichi Takahashi, Shigeru Abe, Yoshikazu Yamaguchi, Tsutomu Shimokawa

Proceedings Volume 6923, 69232X (2008) https://doi.org/10.1117/12.771621

KEYWORDS: Etching, Photomasks, Reflectivity, Resistance, Semiconducting wafers, Polymers, Silicon, Photoresist processing, Carbon, Lithography

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Showing 5 of 14 publications

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