Epitaxial growth of transition metal dichalcogenides for large area device applications

Joan M. Redwing

doi:10.1117/12.2650891

17 March 2023 Epitaxial growth of transition metal dichalcogenides for large area device applications

Joan M. Redwing

Proceedings Volume PC12423, 2D Photonic Materials and Devices VI; (2023) https://doi.org/10.1117/12.2650891
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Wafer-scale epitaxial growth of semiconducting transition metal dichalcogenide (TMD) monolayers such as MoS2, WS2 and WSe2 is of significant interest for device applications to circumvent size limitations associated with the use of exfoliated flakes. Epitaxy is required to achieve single crystal films over large areas via coalescence of TMD domains. Our research has focused on epitaxial growth of 2D semiconducting TMDs on sapphire substrates using metalorganic chemical vapor deposition (MOCVD). Steps on the miscut sapphire surface serve as preferential sites for nucleation and can be used to induce a preferred crystallographic direction to the TMD domains which enables a reduction in inversion domain boundaries in coalesced films. The step-directed growth is dependent on the surface termination of the sapphire which can be altered through pre-growth annealing in H2 and chalcogen-rich environments. Uniform growth of TMD monolayers with significantly reduced inversion domains is

Conference Presentation

Citation Download Citation

Joan M. Redwing "Epitaxial growth of transition metal dichalcogenides for large area device applications", Proc. SPIE PC12423, 2D Photonic Materials and Devices VI, (17 March 2023); https://doi.org/10.1117/12.2650891

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