Planar InP/InGaAs Avalanche Photodiodes Grown By Atmospheric Pressure Metal Organic Vapour Phase Epitaxy.

M DA MacBean; P M Rodgers; T G Lynch; M D Learmouth; R H Walling; L Davis; M J Robertson

doi:10.1117/12.959743

23 February 1989 Planar InP/InGaAs Avalanche Photodiodes Grown By Atmospheric Pressure Metal Organic Vapour Phase Epitaxy.

M DA MacBean, P M Rodgers, T G Lynch, M D Learmouth, R H Walling, L Davis, M J Robertson

Author Affiliations +

Proceedings Volume 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications; (1989) https://doi.org/10.1117/12.959743
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

We compare the performance of high speed planar InP/InGaAs separate absorption, grading and multiplication region avalanche photodiodes where the grading layer consists of a single quaternary layer or a chirped superlattice. The devices are grown by atmospheric pressure metal organic vapour phase epitaxy which has been found to produce good quality, low defect density, uniform material on large area (2") slices. Both types of grading layer are found to suppress the slow component of the avalanche photodiodes pulse response while exhibiting low dark currents (1-10nA @ 0.9Vb). The characteristics of the diodes are shown to be uniform over 2" wafers and suitable for use at bit rates up to at least 2.4Gbaud.

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M DA MacBean, P M Rodgers, T G Lynch, M D Learmouth, R H Walling, L Davis, and M J Robertson "Planar InP/InGaAs Avalanche Photodiodes Grown By Atmospheric Pressure Metal Organic Vapour Phase Epitaxy.", Proc. SPIE 0988, Components for Fiber Optic Applications III and Coherent Lightwave Communications, (23 February 1989); https://doi.org/10.1117/12.959743

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