Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning

Chun-Hung Liu; Shih-Ming Chang; Chia-Hua Chang; Wen Lo; Hsin-Wei Wu; Chien-Cheng Chen; Alex Chen; Shuo-Yen Chou; Ru-Gun Liu

doi:10.1117/12.2302685

19 March 2018 Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning

Chun-Hung Liu, Shih-Ming Chang, Chia-Hua Chang, Wen Lo, Hsin-Wei Wu, Chien-Cheng Chen, Alex Chen, Shuo-Yen Chou, Ru-Gun Liu

Author Affiliations +

Proceedings Volume 10584, Novel Patterning Technologies 2018; 105841E (2018) https://doi.org/10.1117/12.2302685
Event: SPIE Advanced Lithography, 2018, San Jose, California, United States

Abstract

As semiconductor features shrink in dimension and pitch, the excessive control of critical-dimension uniformity (CDU) and pattern fidelity is essential for mask manufacturing using electron-beam lithography. Requirements of the electronbeam shot quality affected by shot unsteadiness become more important than before for the advanced mask patterning. Imperfect electron optical system, an inaccurate beam deflector, and imprecise mask stage control are mainly related to the shot unsteadiness including positioning and dose perturbations. This work extensively investigates impacts of variable shaped beam dose and positioning perturbations on local CDU using Monte Carlo simulation for various mask contrast enhancement approaches. In addition, the relationship between the mask lithographic performance and the shot count number correlated with mask writing time is intensively studied.

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Chun-Hung Liu, Shih-Ming Chang, Chia-Hua Chang, Wen Lo, Hsin-Wei Wu, Chien-Cheng Chen, Alex Chen, Shuo-Yen Chou, and Ru-Gun Liu "Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning", Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841E (19 March 2018); https://doi.org/10.1117/12.2302685

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