Dr. Ru-Gun Liu Profile

Dr. Ru-Gun Liu

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 12 November 2024 Presentation + Paper

Presentation + Paper

Logic and memory patterning breakthrough using High-NA lithography

V. Blanco Carballo, S. Roy, B. Chowrira, T. Pham, J. Wouters, S. Das, S. Decoster, P. Leray, R. Liu, K. Ronse, G. Vandenberghe, A. Niroomand, P. Foubert, V. Rutigliani, H. Suh, M. Gupta, D. de Simone, M. Dusa, C. Beral, V. Philipsen, V. Wiaux, J. Franke, J. Bekaert, B. Baskaran, W. Gillijns, R. Kim, Y. Sherazi, H. Vats, M. Cupak, C. Chang, Y.-J. Lin, J. Lee, S. Hwang, K. Yang, K. Miyaguchi

Proceedings Volume 13216, 1321604 (2024) https://doi.org/10.1117/12.3047176

KEYWORDS: Metals, Optical lithography, Logic, Semiconducting wafers, Extreme ultraviolet lithography, Etching, Scanning electron microscopy, Lithography, Tin

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Proceedings Article | 19 March 2018 Paper

Paper

Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning

Chun-Hung Liu, Shih-Ming Chang, Chia-Hua Chang, Wen Lo, Hsin-Wei Wu, Chien-Cheng Chen, Alex Chen, Shuo-Yen Chou, Ru-Gun Liu

Proceedings Volume 10584, 105841E (2018) https://doi.org/10.1117/12.2302685

KEYWORDS: Photomasks, Vestigial sideband modulation, Monte Carlo methods, Model-based design, Beam shaping, Critical dimension metrology, Electron beam lithography, Lithography, Process modeling, Optical lithography

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Proceedings Article | 15 March 2016 Paper

Paper

Inverse polarizer on immersion lithography mask

Minfeng Chen, Shuo-Yen Chou, Chun-Kuang Chen, Ru-Gun Liu, Tsai-Sheng Gau

Proceedings Volume 9780, 97801R (2016) https://doi.org/10.1117/12.2225127

KEYWORDS: Diffraction, Photomasks, Polarizers, Dielectric polarization, Image quality, Polarization, Transmittance, Immersion lithography, Lithography, Diffraction gratings

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Proceedings Article | 19 March 2015 Paper

Paper

Simulation of AIMS measurements using rigorous mask 3D modeling

Chih-Shiang Chou, Hsu-Ting Huang, Fu-Sheng Chu, Yuan-Chih Chu, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau

Proceedings Volume 9424, 94241A (2015) https://doi.org/10.1117/12.2085113

KEYWORDS: Photomasks, 3D modeling, Inspection, Diffraction, 3D metrology, Semiconducting wafers, 3D image processing, Calibration, Scattering, Wafer inspection

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Proceedings Article | 31 March 2014 Paper

Paper

Resist profile simulation with fast lithography model

Yan-Ying He, Chih-Shiang Chou, Yu-Po Tang, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau

Proceedings Volume 9052, 90520Y (2014) https://doi.org/10.1117/12.2045538

KEYWORDS: 3D modeling, Scanning electron microscopy, Diffusion, Data modeling, Lithography, Calibration, Semiconducting wafers, Visual process modeling, 3D image processing, Optical proximity correction

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Proceedings Article | 12 April 2013 Paper

Paper

Interference harmonics and rigorous EM spectrum analysis method for low-k1 CD Bossung tilt correction

Shuo-Yen Chou, Hoi-Tou Ng, Yi-Yin Chen, Chien-Fu Lee, Ru-Gun Liu, Tsai-Sheng Gau

Proceedings Volume 8683, 868315 (2013) https://doi.org/10.1117/12.2010599

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Diffraction, Reflectivity, Polarization, Spectrum analysis, Control systems, Critical dimension metrology, Resolution enhancement technologies

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Proceedings Article | 10 April 2013 Paper

Paper

Joint calibration of 3D resist image and CDSEM

C. S. Chou, Y. Y. He, Y. P. Tang, Y. T. Chang, W. C. Huang, R. G. Liu, T. S. Gau

Proceedings Volume 8681, 868113 (2013) https://doi.org/10.1117/12.2010846

KEYWORDS: 3D modeling, Scanning electron microscopy, Photoresist materials, Diffusion, Calibration, Critical dimension metrology, Performance modeling, 3D image processing, Optical proximity correction, Lithography

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Proceedings Article | 14 March 2012 Paper

Paper

Building 3D aerial image in photoresist with reconstructed mask image acquired with optical microscope

C. S. Chou, Y. P. Tang, F. S. Chu, W. C. Huang, R. G. Liu, T. S. Gau

Proceedings Volume 8326, 83261L (2012) https://doi.org/10.1117/12.917794

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, 3D image reconstruction, Photoresist materials, Scanning electron microscopy, Reflection, Calibration, Refraction, 3D acquisition

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Proceedings Article | 13 March 2012 Paper

Paper

Multiple-image-depth modeling for hotspot and AF printing detections

Y. P. Tang, C. S. Chou, W. C. Huang, R. G. Liu, T. S. Gau

Proceedings Volume 8326, 832619 (2012) https://doi.org/10.1117/12.917402

KEYWORDS: Printing, Optical proximity correction, Atrial fibrillation, Calibration, Semiconducting wafers, Data modeling, 3D modeling, SRAF, Scanning electron microscopy, Cadmium

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Proceedings Article | 16 March 2009 Paper

Paper

OPC segmentation: dilemma between degree-of-freedom and stability with some relieves

Y. P. Tang, J. H. Feng, M. H. Chih, C. K. Tsai, W. C. Huang, C. C. Kuo, R. G. Liu, H. T. Lin, Y. C. Ku

Proceedings Volume 7274, 72742G (2009) https://doi.org/10.1117/12.814907

KEYWORDS: Optical proximity correction, Image segmentation, Optical lithography, Resolution enhancement technologies, Lithographic illumination, Detection and tracking algorithms, Neodymium, Semiconductor manufacturing, Immersion lithography, Photomasks

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Proceedings Article | 19 March 2008 Paper

Paper

Layout patterning check for DFM

C. C. Chang, I. C. Shih, J. F. Lin, Y. S. Yen, C. M. Lai, W. C. Huang, R. G. Liu, Y. C. Ku

Proceedings Volume 6925, 69251R (2008) https://doi.org/10.1117/12.775420

KEYWORDS: Lithography, Design for manufacturing, Nanoimprint lithography, Optical lithography, Manufacturing, Design for manufacturability, Critical dimension metrology, Model-based design, Semiconducting wafers, Inspection

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Proceedings Article | 7 March 2008 Paper

Paper

Pellicle effect on OPC modeling

Boren Luo, Chi-Kang Chang, W. Wang, W. Huang, Timothy Wu, C. Lai, R. Liu, H. Lin, K. Chen, Y. Ku

Proceedings Volume 6924, 69243T (2008) https://doi.org/10.1117/12.775419

KEYWORDS: Pellicles, Optical proximity correction, Photomasks, Data modeling, Polarization, Immersion lithography, Projection systems, Diffraction, Signal attenuation, Critical dimension metrology

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Proceedings Article | 21 March 2007 Paper

Paper

Patterning effect and correlated electrical model of post-OPC MOSFET devices

Y. C. Cheng, T. H. Ou, M. H. Wu, W. L. Wang, J. H. Feng, W. C. Huang, C. M. Lai, R. G. Liu, Y. C. Ku

Proceedings Volume 6521, 65210G (2007) https://doi.org/10.1117/12.717254

KEYWORDS: Optical lithography, Instrument modeling, Data modeling, Critical dimension metrology, Transistors, Field effect transistors, Manufacturing, Design for manufacturing, Silicon, Lithography

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Proceedings Article | 20 March 2006 Paper

Paper

Intelligent model-based OPC

W.C. Huang, C.M. Lai, B. Luo, C.K. Tsai, M.H. Chih, C.W. Lai, C.C. Kuo, R.G. Liu, H.T. Lin

Proceedings Volume 6154, 615436 (2006) https://doi.org/10.1117/12.657792

KEYWORDS: Optical proximity correction, Lithography, Genetic algorithms, Model-based design, Optimization (mathematics), Artificial neural networks, Image segmentation, Neural networks, Semiconducting wafers, Systems modeling

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Optical proximity correction is the technique of pre-distorting mask layouts so that the printed patterns are as close to the desired shapes as possible. For model-based optical proximity correction, a lithographic model to predict the edge position (contour) of patterns on the wafer after lithographic processing is needed. Generally, segmentation of edges is performed prior to the correction. Pattern edges are dissected into several small segments with corresponding target points. During the correction, the edges are moved back and forth from the initial drawn position, assisted by the lithographic model, to finally settle on the proper positions. When the correction converges, the intensity predicted by the model in every target points hits the model-specific threshold value. Several iterations are required to achieve the convergence and the computation time increases with the increase of the required iterations. An artificial neural network is an information-processing paradigm inspired by biological nervous systems, such as how the brain processes information. It is composed of a large number of highly interconnected processing elements (neurons) working in unison to solve specific problems. A neural network can be a powerful data-modeling tool that is able to capture and represent complex input/output relationships. The network can accurately predict the behavior of a system via the learning procedure. A radial basis function network, a variant of artificial neural network, is an efficient function approximator. In this paper, a radial basis function network was used to build a mapping from the segment characteristics to the edge shift from the drawn position. This network can provide a good initial guess for each segment that OPC has carried out. The good initial guess reduces the required iterations. Consequently, cycle time can be shortened effectively. The optimization of the radial basis function network for this system was practiced by genetic algorithm, which is an artificially intelligent optimization method with a high probability to obtain global optimization. From preliminary results, the required iterations were reduced from 5 to 2 for a simple dumbbell-shape layout.

Proceedings Article | 12 May 2005 Paper

Paper

OPC modeling by genetic algorithm

W. Huang, C. Lai, B. Luo, C. Tsai, C. Tsay, C. Kuo, R. Liu, H. Lin, B. Lin

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.602096

KEYWORDS: Optical proximity correction, Lithography, Wafer-level optics, Genetic algorithms, Model-based design, Data modeling, Optimization (mathematics), Optical lithography, Photomasks, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

Paper

Phenomena and OPC solution of ripple patterns for 65-nm node

Chih-Ming Lai, Jeng-Shiun Ho, Chien-Wen Lai, Cheng-Kun Tsai, Cherng-Shyan Tsay, Jeng-Horng Chen, Ru-Gun Liu, Yao Ku, Burn-Jeng Lin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544250

KEYWORDS: Optical proximity correction, Optical lithography, Algorithm development, Lithography, Photomasks, Critical dimension metrology

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Proceedings Article | 28 May 2004 Paper

Paper

Two threshold resist models for optical proximity correction

Wen-Chun Huang, Chia-Hui Lin, Chin-Chen Kuo, C. Huang, J. Lin, Jeng-Horng Chen, Ru-Gun Liu, Yao Ku, Burn-Jeng Lin

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544252

KEYWORDS: Optical proximity correction, Data modeling, Optical lithography, Photoresist processing, Chemical reactions

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SPIE Journal Paper | 1 April 2004

Mask error tensor and causality of mask error enhancement for low-k₁ imaging: theory and experiments

Chun-Kuang Chen, Tsai-Sheng Gau, Jaw-Jung Shin, Ru-Gun Liu, Shinn-Sheng Yu, Anthony Yen, Burn-Jeng Lin

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1669508

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Tolerancing, Error analysis, Scanners, Diffraction, Solids, Lithography, Electroluminescence

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Proceedings Article | 17 December 2003 Paper

Paper

Global CD uniformity improvement in mask manufacturing for advanced lithography

Shih-Ming Chang, Chih-Cheng Chin, Wen-Chuan Wang, Chi-Lun Lu, Ren-Guey Hsieh, Cherng-Shyan Tsay, Yung-Sung Yen, Sheng-Chi Chin, Hsin-Chang Lee, Ru-Gun Liu, Kuei-Shun Chen, Hung-Chang Hsieh, Yao Ku, John Lin

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518008

KEYWORDS: Photomasks, Error analysis, Critical dimension metrology, Lithography, Manufacturing, Inspection, Etching, Software development, Semiconductor manufacturing, Control systems

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Proceedings Article | 28 August 2003 Paper

Paper

Mask cost and cycle time reduction

Hong-Chang Hsieh, Johnson Hung, Angus Chin, Sheng-Cha Lee, Jaw-Jung Shin, Ru-Gun Liu, Burn Lin

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504288

KEYWORDS: Photomasks, Optical proximity correction, Inspection, Semiconducting wafers, Defect inspection, Lithography, Critical dimension metrology, Mask making, Manufacturing, Vestigial sideband modulation

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Proceedings Article | 26 June 2003 Paper

Paper

Precision control of poly-gate CD by local OPC for elimination of microloading effect on 0.13-um CMOS technology

Tzy-Kuang Lee, Yao-Ching Wang, Min-hwa Chi, C. Lu, C. Hsieh, R. Liu, H. Liao, S. Yang, Chih-Hao Chang

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485250

KEYWORDS: Optical proximity correction, Transistors, Critical dimension metrology, Etching, CMOS technology, Photomasks, Amplifiers, Optical lithography, Semiconducting wafers, Silicon

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SPIE Journal Paper | 1 October 2002

Customized illumination aperture filter design for through-pitch focus latitude enhancement of deep submicron contact hole printing

Shuo-Yen Chou, Jen-Chung Lou, Fu-Jye Liang, Tsai-Sheng Gau, Ru-Gun Liu, Chun-Kuang Chen, Chih-Ming Lai

JM3, Vol. 1, Issue 03, (October 2002) https://doi.org/10.1117/12.10.1117/1.1502261

KEYWORDS: Diffraction, Printing, Photomasks, Phase shifts, Lithographic illumination, Visualization, Monochromatic aberrations, Lithography, Optical lithography, Resolution enhancement technologies

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Proceedings Article | 30 July 2002 Paper

Paper

Model-based OPC for 0.13-um contacts using 248-nm Att PSM

Jaw-Jung Shin, T. Wu, Chun-Kuang Chen, R. Liu, Yao Ching Ku, Burn Lin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474511

KEYWORDS: Optical proximity correction, Critical dimension metrology, Photomasks, Model-based design, Semiconducting wafers, Cadmium, Data modeling, Logic, Lithography, Phase shifts

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Proceedings Article | 30 July 2002 Paper

Paper

Mask error tensor and causality of mask error enhancement for low-k1 imaging: theory and experiments

Chun-Kuang Chen, Tsai-Sheng Gau, Jaw-Jung Shin, Ru-Gun Liu, Shinn Sheng Yu, Anthony Yen, Burn Lin

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474574

KEYWORDS: Photomasks, Critical dimension metrology, Semiconducting wafers, Mask making, Lithography, Tolerancing, Scanners, Optical lithography, Error analysis, Semiconductor manufacturing

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Proceedings Article | 14 September 2001 Paper

Paper

Optimal positions for SB assignment and the specification of SB width variation

Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau, Fu-Jye Liang, Shuo-Yen Chou, Lin-Hung Shiu

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435683

KEYWORDS: Antimony, Scattering, Critical dimension metrology, Double sideband modulation, Resolution enhancement technologies, Modulation, Superposition, Light scattering, Chromium, Photoresist processing

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Proceedings Article | 5 July 2000 Paper

Paper

Customized illumination aperture filter for low k1 photolithography process

Tsai-Sheng Gau, Ru-Gun Liu, Chun-Kuang Chen, Chih-Ming Lai, Fu-Jye Liang, Chin Hsia

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389016

KEYWORDS: Optical proximity correction, Diffraction, Printing, Optical lithography, Electroluminescence, Lithographic illumination, Resolution enhancement technologies, Photomasks, Scanning electron microscopy, Diffractive optical elements

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Proceedings Article | 26 July 1999 Paper

Paper

Customized off-axis illumination aperture filtering for sub-0.18-um KrF lithography

Chin Hsia, Tsai-Sheng Gau, Chuen-Huei Yang, Ru-Gun Liu, ChungHsing Chang, Li-Jui Chen, Chien-Ming Wang, J. Fung Chen, Bruce Smith, Gue-Wuu Hwang, JiannWen Lay, Dong-Yuan Goang

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354354

KEYWORDS: Optical proximity correction, Lithographic illumination, Optical filters, Resolution enhancement technologies, Electroluminescence, Lithography, Optical lithography, Photomasks, Modulation, Calcium

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Showing 5 of 27 publications

Conference Committee Involvement (12)

Advanced Etch Technology and Process Integration for Nanopatterning XII

28 February 2023 | San Jose, California, United States

Advanced Etch Technology and Process Integration for Nanopatterning XI

26 April 2022 | San Jose, California, United States

Advanced Etch Technology and Process Integration for Nanopatterning X

22 February 2021 | Online Only, California, United States

Design-Process-Technology Co-optimization for Manufacturability XIV

26 February 2020 | San Jose, California, United States

Advanced Etch Technology for Nanopatterning IX

25 February 2020 | San Jose, California, United States

Showing 5 of 12 Conference Committees

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