Paper
1 October 1990 Spontaneous low-frequency resistance switching noise in a narrow MODFET
Philippe Debray, Jose Vicente
Author Affiliations +
Proceedings Volume 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors; (1990) https://doi.org/10.1117/12.20800
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
We have observed low-frequency discrete resistance switching noise in a Si modulation-doped GaAs/ A!GaAs narrow MODFET. Resistance measurements were done at 1.5 and 4.2K as a function of applied magnetic field B to understand the origin of the resistance fluctuations. The noise magnitude diminishes rapidly as the field is increased and also decreases as the temperature T is raised. This can be understood in terms of strongly correlated spontaneous emptying and filling of ensembles or clusters of interacting localized electron states. The effect of increasing B or T is to weaken the interactions ultimately giving away to individual states fluctuating between two metastable configurations. Any relation of this noise to quantum interference effect is unclear.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Philippe Debray and Jose Vicente "Spontaneous low-frequency resistance switching noise in a narrow MODFET", Proc. SPIE 1284, Nanostructure and Microstructure Correlation with Physical Properties of Semiconductors, (1 October 1990); https://doi.org/10.1117/12.20800
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KEYWORDS
Resistance

Magnetism

Field effect transistors

Switching

Switches

Nanostructures

Scattering

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