Paper
7 June 1996 Fast and accurate optical proximity correction based on aerial image simulation
Tetsuro Hanawa, Kazuya Kamon, Akihiro Nakae, Shuji Nakao, Koichi Moriizumi
Author Affiliations +
Abstract
Because optical lithography requires precise CD control, we developed a fast, accurate proximity correction method based on aerial image simulation. Simple formulas using a linear combination of simulated aerial image intensities both at and around mask edge were found effective for fast, precise CD prediction. Using the developed CD prediction and the fine biasing correction methods, we verified that various two-dimensional patterns printed by an i- line stepper using modified illumination and binary intensity mask are satisfactorily corrected; i.e., CD deviations from designed values, line shortening and feature deformations are effectively reduced.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsuro Hanawa, Kazuya Kamon, Akihiro Nakae, Shuji Nakao, and Koichi Moriizumi "Fast and accurate optical proximity correction based on aerial image simulation", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240929
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Optical proximity correction

Photomasks

Critical dimension metrology

Semiconducting wafers

Binary data

Diffraction

Optical lithography

RELATED CONTENT

CD data requirements for proximity effect corrections
Proceedings of SPIE (December 07 1994)
Aerial image based design of rim phase shift masks with...
Proceedings of SPIE (August 08 1993)
Application of attenuated phase shifting masks to sub 130 nm...
Proceedings of SPIE (September 14 2001)
ArF lithography options for 100-nm technologies
Proceedings of SPIE (September 14 2001)

Back to Top