Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe

O. G. Lanskaya; E. P. Lilenko; Aleksander V. Voitsekhovskii

doi:10.1117/12.368331

4 November 1999 Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg_1-xZn_xTe

O. G. Lanskaya, E. P. Lilenko, Aleksander V. Voitsekhovskii

Proceedings Volume 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (1999) https://doi.org/10.1117/12.368331
Event: Material Science and Material Properties for Infrared Optoelectronics, 1998, Kiev, Ukraine

Abstract

The composition of subsurface region MZT has been studied using Rutherford backscattering spectroscopy (RBS) ions helium. Interrelation of the electrical properties of MIS structures with the result of RBS have been determinated. It is found that the effective surface charge is connected with composition stoichiometry variation of subsurface region semiconductor.

Citation Download Citation

O. G. Lanskaya, E. P. Lilenko, and Aleksander V. Voitsekhovskii "Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg_1-xZn_xTe", Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); https://doi.org/10.1117/12.368331

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