Dr. Alexander V. Voitsekhovskii Profile

Dr. Alexander V. Voitsekhovskii

Head of Chair at National Research Tomsk State Univ

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 15 December 2015 Paper

Influence of pulsed nanosecond volume discharge in atmospheric-pressure air on the electrical characteristics of MCT epitaxial films

Denis Grigoryev, Alexandr Voitsekhovskii, Kirill Lozovoy, Sergey Nesmelov, Stanislav Dzyadukh, Viktor Tarasenko, Michail Shulepov, Sergei Dvoretskii

Proceedings Volume 9810, 98100U (2015) https://doi.org/10.1117/12.2224704

KEYWORDS: Mercury cadmium telluride, Electrons, Dielectrics, Oxides, Plasma, Interfaces, Molecular beam epitaxy, Capacitance, Infrared imaging, Electron beams

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Proceedings Article | 25 November 2014 Paper

Optical-physical methods of remote diagnostics of high-temperature gas media

O. Voitsekhovskaya, A. Voitsekhovskii, O. Egorov, D. Kashirskii

Proceedings Volume 9292, 929211 (2014) https://doi.org/10.1117/12.2075131

KEYWORDS: Absorption, Atmospheric modeling, Diagnostics, Remote sensing, Aerosols, Sensors, Ocean optics, Atmospheric particles, Atmospheric propagation, Receivers

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Proceedings Article | 30 September 2005 Paper

Researching photoelectric parameters of MCT MBE graded band-gap nanolayers with non-homogeneous composition and level of doping

Alexander Voitsekhovskii, Andrey Kokhanenko, Michael Filatov, Nelly Fedorova

Proceedings Volume 5957, 595719 (2005) https://doi.org/10.1117/12.622173

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Proceedings Article | 30 September 2005 Paper

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

A. Voitsekhovskii, S. Nesmelov, A. Kokhanenko, Yu. Sidorov, V. Varavin, S. Dvoretsky, N. Mikhailov, V. Vasiliev, Yu. Mashukov, T. Zakharyash

Proceedings Volume 5957, 595717 (2005) https://doi.org/10.1117/12.622117

KEYWORDS: Silicon, Mercury cadmium telluride, Resistance, Semiconductors, Capacitance, Electrodes, Mercury, Cadmium, Epitaxy, Dielectrics

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Proceedings Article | 30 September 2005 Paper

The boron implantation in the graded-band MBE HgCdTe epilayer

Alexander Voitsekhovskii, Denis Grigor'ev, Andrey Kokhanenko, Alexander Korotaev, Yuriy Sidorov, Vasiliy Varavin, Sergey Dvoretsky, Nicolay Mikhailov, Niyaz Kh. Talipov

Proceedings Volume 5957, 595718 (2005) https://doi.org/10.1117/12.622158

KEYWORDS: Boron, Ions, Mercury, Cadmium, Tellurium, Ion implantation, Statistical analysis, Mercury cadmium telluride, Manufacturing, Diffusion

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Proceedings Article | 22 October 2003 Paper

Conductivity anisotropy of CdHgTe MBE layers with a periodic surface microrelief

Aleksander Voitsekhovskii, Andrej Kokhanenko, N. Nesterovich, Vasily Varavin, Sergey Dvoretsky, Yuri Sidorov, Nikolay Mikhailov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519765

KEYWORDS: Anisotropy, Temperature metrology, Annealing, Microscopy, Epitaxy, Gallium arsenide, Crystals, Absorption, Solids, Scattering

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Proceedings Article | 22 October 2003 Paper

Radiation effects in photoconductive MCT MBE heterostructures

Aleksander Voitsekhovskii, Andrej Kokhanenko, Aleksander Korotaev, D. Grigor'ev, Vasily Varavin, Sergey Dvoretsky, Yuri Sidorov, Nikolay Mikhailov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519767

KEYWORDS: Heterojunctions, Magnetism, Gamma radiation, Radiation effects, Crystals, Mercury cadmium telluride, Semiconductor physics, Molecular beam epitaxy, Electron beams, Statistical analysis

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Proceedings Article | 22 October 2003 Paper

Spectral detectivity and NETD of doping-spike PtSi-p-Si and HIP GeSi-Si detectors

Aleksander Voitsekhovskii, Andrej Kokhanenko, Sergey Nesmelov

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519757

KEYWORDS: Sensors, Boron, Ions, Silicon, Chemical species, Semiconductors, Ion beams, Annealing, Infrared sensors, Quantum efficiency

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Proceedings Article | 14 April 2003 Paper

Threshold characteristics of p-Si-PtSi barriers with highly-doped surface nanolayer

Sergey Nesmelov, Aleksander Voitsekhovskii, Andrej Kokhanenko

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502186

KEYWORDS: Quantum efficiency, Silicon, Metals, Semiconductors, Doping, Photodetectors, Scattering, Epitaxy, Ion implantation, Boron

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Proceedings Article | 27 March 2002 Paper

Energy band diagrams of PtSi-Si barrier with a heavily doped surface nanolayer formed by recoil implantation

Sergey Nesmelov, Aleksander Voitsekhovskii, Aleksander Korotaev, Andrej Kokhanenko

Proceedings Volume 4654, (2002) https://doi.org/10.1117/12.463849

KEYWORDS: Silicon, Ions, Semiconductors, Boron, Metals, Chemical species, Doping, Interfaces, Photodetectors, Ion beams

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Proceedings Article | 17 April 2001 Paper

Photoelectric properties of inhomogeneous infrared MIS photodetectors in base of HgCdTe and Si

Aleksander Voitsekhovskii, Sergey Nesmelov

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425462

KEYWORDS: Electrodes, Resistance, Mercury cadmium telluride, Silicon, Semiconductors, Signal generators, Infrared radiation, Photodetectors, Modulation, Infrared photography

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Proceedings Article | 17 April 2001 Paper

Photoelectric characteristics of PtSi-Si Schottky barrier with heavily boron-doped nanolayer

Aleksander Voitsekhovskii, Andrej Kokhanenko, Aleksander Korotaev, Sergey Nesmelov

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425461

KEYWORDS: Boron, Silicon, Ions, Annealing, Ion beams, Chemical species, Photodetectors, Sputter deposition, Aluminum, Silicon films

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Proceedings Article | 17 April 2001 Paper

Photosensitive structures using Hg1-xCdxTe solid solutions grown by molecular beam epitaxy

Aleksander Voitsekhovskii, Andrej Kokhanenko, N. Koulchitskii

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425460

KEYWORDS: Photoresistors, Mercury cadmium telluride, Molecular beam epitaxy, Solids, Chemical elements, Sensors, Optoelectronic devices, Photodetectors, Picosecond phenomena, Stray light

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Proceedings Article | 22 February 2001 Paper

Electron-positron annihilation in the narrow-gap semiconductor Hg1-xCdxTe

Andrej Kokhanenko, Aleksander Korotaev, Aleksander Voitsekhovskii

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417779

KEYWORDS: Mercury, Semiconductors, Crystals, Picosecond phenomena, Solids, Annealing, Chemical species, Photons, Infrared materials, Infrared radiation

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Proceedings Article | 22 February 2001 Paper

Photoelectric characteristics of inhomogeneous MIS structures based in Si, HgCdTe

Aleksander Voitsekhovskii, Sergey Nesmelov, N. Koulchitskii

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417795

KEYWORDS: Electrodes, Silicon, Semiconductors, Resistance, Mercury cadmium telluride, Dielectrics, Modulation, Signal generators, Nickel, Etching

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Proceedings Article | 22 February 2001 Paper

Surface and oxide narrow-gap semiconductor interface Rutherford backscattering method

Aleksander Voitsekhovskii, O. Lanskaya, E. Lilenko

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417778

KEYWORDS: Semiconductors, Oxides, Ions, Scattering, Mercury cadmium telluride, Interfaces, Mercury, Backscatter, Spectroscopy, Oxidation

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Proceedings Article | 4 November 1999 Paper

Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe

O. Lanskaya, E. Lilenko, Aleksander Voitsekhovskii

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368331

KEYWORDS: Mercury, Tellurium, Backscatter, Zinc, Ions, Semiconductors, Wet etching, Spectroscopy, Helium, Indium

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Proceedings Article | 4 November 1999 Paper

Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy

Aleksander Voitsekhovskii, Yu. Denisov, Andrej Kokhanenko

Proceedings Volume 3890, (1999) https://doi.org/10.1117/12.368354

KEYWORDS: Temperature metrology, Molecular beam epitaxy, Epitaxy, Annealing, Mercury, Semiconductors, Gallium arsenide, Time metrology, Absorption, Mercury cadmium telluride

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Proceedings Article | 1 September 1999 Paper

Formation of heavily boron-doped nanolayer in silicon by powerful ion irradiation

Andrej Kokhanenko, Aleksander Korotaev, Aleksander Voitsekhovskii, Ivan Grushin, Mikhail Opekunov, Gennady Remnev

Proceedings Volume 3881, (1999) https://doi.org/10.1117/12.360564

KEYWORDS: Ions, Boron, Chemical species, Silicon, Ion beams, Annealing, Scattering, Aluminum, Interfaces, Sputter deposition

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Proceedings Article | 1 September 1999 Paper

Photoelectric characteristics of inhomogeneous MOS silicon-based structures

Aleksander Voitsekhovskii, Sergey Nesmelov

Proceedings Volume 3881, (1999) https://doi.org/10.1117/12.360565

KEYWORDS: Electrodes, Semiconductors, Silicon, Resistance, Dielectrics, Signal generators, Nickel, Modulation, Etching, Molybdenum

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Proceedings Article | 8 April 1999 Paper

Carrier lifetime in Hg1-xCdxTe grown by molecular beam epitaxy

Aleksander Voitsekhovskii, Yu. Denisov, Andrej Kokhanenko, N. Kulchitskii

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344750

KEYWORDS: Mercury cadmium telluride, Molecular beam epitaxy, Chromium, Resistance, Absorption, Epitaxy, Infrared detectors, Infrared radiation, Sensors, Signal detection

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