IC-compatible process for pattern transfer in deep wells for integration of RF components

Nga Phuong Pham; Pasqualina M. Sarro; Joachim N. Burghartz

doi:10.1117/12.396458

25 August 2000 IC-compatible process for pattern transfer in deep wells for integration of RF components

Nga Phuong Pham, Pasqualina M. Sarro, Joachim N. Burghartz

Proceedings Volume 4174, Micromachining and Microfabrication Process Technology VI; (2000) https://doi.org/10.1117/12.396458
Event: Micromachining and Microfabrication, 2000, Santa Clara, CA, United States

Abstract

An IC-compatible process for pattern transfer in deep wells and cavities for the integration of RF components is presented. After an anisotropic wet etching step used to define the optimum position of the ground plane, structures need to be patterned on the bottom of 250-400 micrometers dep etched grooves, trenches or cavities to realize wafer- through contact holes and metal patterns. Thick positive photoresist such as AZ4562 and ma-P275 are used. Modified resist spinning procedure and soft bake process resulted in a good coverage of the etched cavities, even for the deeper ones. The effect of resist thickness and spinning procedure on coating defect density and resolution loss is investigated and optimum conditions are found. A few examples of structures realized using the process described here are shown to indicate the potential and restrictions of this process.

Citation Download Citation

Nga Phuong Pham, Pasqualina M. Sarro, and Joachim N. Burghartz "IC-compatible process for pattern transfer in deep wells for integration of RF components", Proc. SPIE 4174, Micromachining and Microfabrication Process Technology VI, (25 August 2000); https://doi.org/10.1117/12.396458

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