Nitride LED chip separation technologies

Bryan S. Shelton; Anthony DiCarlo; Emil Stefanov; Ivan Eliashevich

doi:10.1117/12.457158

26 November 2002 Nitride LED chip separation technologies

Bryan S. Shelton, Anthony DiCarlo, Emil Stefanov, Ivan Eliashevich

Proceedings Volume 4776, Solid State Lighting II; (2002) https://doi.org/10.1117/12.457158
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The use of laser technology for the separation of gallium nitride-based light-emitting diodes (LEDs) on sapphire substrates overcomes many of the problems associated with standard separation techniques. Scribe-and-break and sawing have many drawbacks and limitations due to the hardness of the sapphire substrate and to its wurtzite crystal lattice. Laser ablation has an inherent advantage over other laser separation techniques that heat the crystal to the point of causing damage. That difference can be used to enhance throughput and yield without sacrificing valuable wafer area. This work illustrates the process advantages of using the laser die separation technology. These advantages include the flexibility of chip shaping and surface modification, minimization of street and kerf width, and chip aspect ratio. A discussion of the wider process window and ease of use of the laser separation system will be demonstrated. In addition, the electrical and optical characteristics of laser separated die will be compared with die separated by competing technologies.

Citation Download Citation

Bryan S. Shelton, Anthony DiCarlo, Emil Stefanov, and Ivan Eliashevich "Nitride LED chip separation technologies", Proc. SPIE 4776, Solid State Lighting II, (26 November 2002); https://doi.org/10.1117/12.457158

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