Dr. Ivan Eliashevich
SPIE Involvement:
Author
Publications (13)

Proceedings Article | 28 February 2008 Paper
P. Saunier, C. Lee, J. Jimenez, A. Balistreri, D. Dumka, H. Tserng, M. Kao, U. Chowdhury, P. Chao, K. Chu, A. Souzis, I. Eliashevich, S. Guo, J. del Alamo, J. Joh, M. Shur
Proceedings Volume 6894, 68941I (2008) https://doi.org/10.1117/12.765467
KEYWORDS: Reliability, Gallium nitride, Silicon carbide, Defense technologies, Piezoelectric effects, Semiconducting wafers, Gallium, Semiconductors, Gallium arsenide, Group II-VI semiconductors

Proceedings Article | 26 January 2004 Paper
Hari Venugopalan, Xiang Gao, Tingting Zhang, Bryan Shelton, Anthony DiCarlo, Ivan Eliashevich, Michael Hsing
Proceedings Volume 5187, (2004) https://doi.org/10.1117/12.514073
KEYWORDS: Light emitting diodes, Indium gallium nitride, Resistance, Silver, Lamps, Reliability, Metals, Packaging, Aluminum, Annealing

Proceedings Article | 3 July 2003 Paper
Hari Venugopalan, Anthony DiCarlo, Xiang Gao, Sebastien Libon, Bryan Shelton, Emil Stefanov, Tingting Zhang, Ivan Eliashevich, Stan Weaver, Michael Hsing, Boris Kolodin, Tom Soules, Doru Florescu, Shiping Guo, Milan Pophristic, Boris Peres
Proceedings Volume 4996, (2003) https://doi.org/10.1117/12.486359
KEYWORDS: Light emitting diodes, Ultraviolet radiation, Lamps, Sapphire, Ultraviolet light emitting diodes, Aluminum, Silicon carbide, Silver, Annealing, Absorption

Proceedings Article | 26 November 2002 Paper
Bryan Shelton, Anthony DiCarlo, Emil Stefanov, Ivan Eliashevich
Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.457158
KEYWORDS: Light emitting diodes, Laser applications, Sapphire, Crystals, Laser optics, Solid state lighting, Gallium, Standards development, Laser ablation, Laser crystals

Proceedings Article | 26 November 2002 Paper
Emil Stefanov, Bryan Shelton, Hari Venugopalan, Tingting Zhang, Ivan Eliashevich
Proceedings Volume 4776, (2002) https://doi.org/10.1117/12.457208
KEYWORDS: Light emitting diodes, Sapphire, Interfaces, Reflectivity, Data modeling, Semiconducting wafers, Reflection, Ray tracing, Refractive index, Surface finishing

Proceedings Article | 17 April 2000 Paper
Ivan Eliashevich, Jean-Philippe Debray, Chuong Tran, Hari Venugopalan, Robert Karlicek
Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382815
KEYWORDS: Light emitting diodes, Indium gallium nitride, Reliability, Visible radiation, Aluminium gallium indium phosphide, Metals, Diodes, Resistance, Light sources and illumination, Luminous efficiency

Proceedings Article | 14 April 1999 Paper
Sherman Li, D. Collins, S. Vatanapradit, M. Ferreira, Peter Zawadzki, Richard Stall, Ivan Eliashevich, J. Nering
Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344469
KEYWORDS: Light emitting diodes, Semiconducting wafers, Aluminum, Manufacturing, Aluminium gallium indium phosphide, Doping, Reflectivity, Metalorganic chemical vapor deposition, Magnesium, Gallium arsenide

Proceedings Article | 14 April 1999 Paper
Ivan Eliashevich, Yuxin Li, Andrei Osinsky, Chuong Tran, Michael Brown, Robert Karlicek
Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344483
KEYWORDS: Light emitting diodes, Gallium nitride, Resistance, Doping, Indium gallium nitride, Semiconducting wafers, Reliability, Diodes, Blue light emitting diodes, Metals

Proceedings Article | 14 April 1999 Paper
Chuong Tran, Robert Karlicek, Michael Brown, Ivan Eliashevich, Alexander Gurary, Richard Stall
Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344487
KEYWORDS: Light emitting diodes, Indium, Indium gallium nitride, Gallium nitride, Semiconducting wafers, Metalorganic chemical vapor deposition, Green light emitting diodes, Reflectivity, Manufacturing, Reflectance spectroscopy

Proceedings Article | 19 August 1998 Paper
Lijun Wang, Sheng Li Wu, Yun Liu, Yongqiang Ning, Jacqueline Diaz, Ivan Eliashevich, Hyuk Yi, Manijeh Razeghi
Proceedings Volume 3547, (1998) https://doi.org/10.1117/12.319596
KEYWORDS: Quantum wells, High power lasers, Continuous wave operation, Gallium arsenide, Heterojunctions, Mirrors, Coating, Semiconductor lasers, Laser damage threshold, Cladding

Proceedings Article | 7 April 1998 Paper
Yuxin Li, Michael Brown, Ivan Eliashevich, T. DiCarlo, Chuong Tran, Robert Karlicek, Richard Stall, L. Koszi, Yu Lu, Hongen Shen
Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304416
KEYWORDS: Light emitting diodes, Gallium nitride, Indium gallium nitride, Temperature metrology, Electroluminescence, Quantum wells, Blue light emitting diodes, Ultraviolet radiation, Excitons, Electrons

Proceedings Article | 24 September 1996 Paper
Lijun Wang, Sheng Li Wu, Jacqueline Diaz, Ivan Eliashevich, Hyuk Yi, Manijeh Razeghi
Proceedings Volume 2886, (1996) https://doi.org/10.1117/12.251910
KEYWORDS: Quantum efficiency, Quantum wells, High power lasers, External quantum efficiency, Laser damage threshold, Internal quantum efficiency, Continuous wave operation, Temperature metrology, Lithium, Heterojunctions

Proceedings Article | 24 April 1995 Paper
Jacqueline Diaz, Hyuk Yi, Seongsin Kim, Matthew Erdtmann, Lewis Wang, Ivan Eliashevich, Erwan Bigan, Manijeh Razeghi
Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206931
KEYWORDS: Quantum wells, Semiconductor lasers, High power lasers, Waveguides, Cladding, Nd:YAG lasers, Continuous wave operation, Heterojunctions, Solid state lasers, Gallium arsenide

Showing 5 of 13 publications
Conference Committee Involvement (5)
Seventh International Conference on Solid State Lighting
27 August 2007 | San Diego, California, United States
Sixth International Conference on Solid State Lighting
14 August 2006 | San Diego, California, United States
Fifth International Conference on Solid State Lighting
1 August 2005 | San Diego, California, United States
Fourth International Conference on Solid State Lighting
3 August 2004 | Denver, Colorado, United States
Third International Conference on Solid State Lighting
5 August 2003 | San Diego, California, United States
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