Verification and application of multi-source focus quantification

J.-G. Simiz; T. Hasan; F. Staals; B. Le-Gratiet; W. T. Tel; C. Prentice; J.-W. Gemmink; A. Tishchenko; Y. Jourlin

doi:10.1117/12.2219143

16 March 2016 Verification and application of multi-source focus quantification

J.-G. Simiz, T. Hasan, F. Staals, B. Le-Gratiet, W. T. Tel, C. Prentice, J.-W. Gemmink, A. Tishchenko, Y. Jourlin

Proceedings Volume 9781, Design-Process-Technology Co-optimization for Manufacturability X; 97810S (2016) https://doi.org/10.1117/12.2219143
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

The concept of the multi-source focus correlation method was presented in 2015 [1, 2]. A more accurate understanding of real on-product focus can be obtained by gathering information from different sectors: design, scanner short loop monitoring, scanner leveling, on-product focus and topography.

This work will show that chip topography can be predicted from reticle density and perimeter density data, including experimental proof. Different pixel sizes are used to perform the correlation in-line with the minimum resolution, correlation length of CMP effects and the spot size of the scanner level sensor. Potential applications of the topography determination will be evaluated, including optimizing scanner leveling by ignoring non-critical parts of the field, and without the need for time-consuming offline topography measurements.

Citation Download Citation

J.-G. Simiz, T. Hasan, F. Staals, B. Le-Gratiet, W. T. Tel, C. Prentice, J.-W. Gemmink, A. Tishchenko, and Y. Jourlin "Verification and application of multi-source focus quantification", Proc. SPIE 9781, Design-Process-Technology Co-optimization for Manufacturability X, 97810S (16 March 2016); https://doi.org/10.1117/12.2219143

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