Large area 2D Selective Area Growth (SAG) of Multi-Quantum Well (MQW) structures is a key methodology required for realization of monolithic multicolor arrays of Photonic Crystal Surface Emitting Lasers (PCSELs) We present a study of InGaAs/GaAs MQWs selectively grown in square SAG windows with dimensions up to 300 x 300 μm2, by MOCVD. The range of QW emission wavelengths and thickness enhancements are elucidated by room-temperature μ-Photoluminescence (PL) and Optical Profilometry (OP) mapping, respectively. It is shown that large areas, ⪅ 100 x 100 μm2, with uniform PL emission can be achieved within a PL tuning range of 86 nm.
We report epitaxially regrown Photonic Crystal Surface-Emitting Lasers (PCSELs) utilizing self-assembled InAs quantum dots (QDs) exhibiting lasing at room temperature. The ability to utilize both the ground-state (GS) and excited-state (ES) of the QDs allows multiple emission wavelengths from one heterostructure. The choice of the grating periods of the photonic crystal allows lasing from neighbouring devices at the GS (~1230 nm) or ES (~1140 nm) of the QDs, 90 nm apart in wavelength. The threshold current densities are 0.69 kA/cm2 and 1.05 kA/cm2 for GS and ES respectively. The effect of PC structures, specifically etch depth of the PC on lasing performance is also discussed.
Photonic crystal surface emitting lasers (PCSELs) are a new class of laser diode, offering control over emission (wavelength, polarisation, beam shape) through photonic crystal design, as well as power scalability and low beam divergence.
We present developments in 2D arrays of large scale (~150x150um) PCSELs, coherently coupled by 1mm long, 100 μm wide waveguides that can be electrically driven into loss or gain. By studying the spectral and current-power characteristics, we show coherent power scaling between multiple devices. We discuss injection locking between devices achieved through controllable 2D in-plane feedback and its effect on the near and far field emissions.
We outline advances in the design, manufacture, and characterisation of a range of all-semiconductor photonic crystal surface emitting lasers (PCSELs). We initially discuss AlAs/GaAs based PC devices that enjoy improved index contrast compared to our previous GaInP/GaAs devices. We will also discuss all-semiconductor InGaAsP/InP based PC PCSELs operating at 1550 nm.
For these high aspect ratio structures, the infill of the PC is a significant epitaxial challenge, and optimisation of MOVPE growth conditions such as growth temperature, rate of temperature increase, and V:III ratio, is demonstrated through TEM structural analysis. We will also discuss the optoelectronic properties of our devices.
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