Ga-free InAs/InAsSb T2SL XBn detector is now a reliable candidate for high-performance focal plane arrays in the MWIR (3-5μm) domain. However, this T2SL is a very anisotropic quantum structure having a type-IIb band offset alignment where electrons are rather delocalized all over the structure while holes are strongly confined in deep InAsSb quantum well. This configuration could penalize the absorption and the hole minority carrier transport but MWIR detector device without anti reflection coating shows quantum efficiency higher than 50%. Considering results of specific measurements and band structure calculation, possible carrier transport scenario is presented to explain such performance.
Monolithic integration of InAs/InAsSb type-II superlattice (T2SL) photodetector on large-scale Si wafers would allow the development of a low-cost, high-quality, Si-readout integrated circuit compatibility focal plane array (FPA). In this study, we compare the performances of MWIR InAs/InAsSb T2SL samples grown on Si and GaSb substrates. The material quality is investigated with High-Resolution X-ray Diffraction, Atomic Force Microscopy, and Photoluminescence (PL). A minority carrier lifetime of 800 ns at 150 K is extracted from time-resolved PL on the sample grown on GaSb/Si templates with dislocation filtering layers. The device performances will be reported at the conference.
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