We report the fabrication and characterization of broad emission linewidth GaAs/AlGaAs quantum-well based
superluminescent diodes. A photon absorption section and an optical amplifier sections are monolithically integrated on
the device to suppress feedback oscillation and to amplifier the optical power, respectively. The device emitters at
850 nm peak wavelength, and exhibits a broad bandwidth of 65 nm, output power > 3.5 mW, and a spectral ripple of 0.5
dB at 20oC under continuous wave operation.
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