GeSn alloys have emerged as a promising material for realizing CMOS-compatible light sources. GeSn lasers demonstrated to date have large device footprints and active areas, which limit the realization of densely integrated lasers operating at low power consumption. Thanks to their intrinsically small device form factors, 1D photonic crystal lasers may offer opportunities to overcome such limitations of large GeSn lasers. Here, we present a 1D photonic crystal nanobeam laser with a very small device footprint (~7 μm2) and a compact active area (~1.2 μm2) on a GeSn-on-insulator substrate.
Since III-nitride semiconductor-based ultraviolet (UV) light-emitting diodes (LEDs) are compact and efficient, they can be suggested as a substitute for conventional arc-lamps. However, reported UV LEDs focused on a narrow range of UV spectrum contrary to conventional arc-lamps. Here, we introduce GaN quantum dots (QDs) grown on different facets of hexagonal truncated pyramid structures on a conventional sapphire substrate. These structures include semipolar facets as well as a polar facet, which obtain intrinsically different piezoelectric fields and growth rates of QDs. Consequently, we demonstrated a plateau-like broadband UV emitter ranging from UV-C to UV-A from the GaN QDs.
A key point of exciton-polaritons is the real-time potential energy controllability due to the interaction from excionic components. Although wide-bandgap semiconductors can form room-temperature polaritons, lateral localizations (disorders) of planar cavities still obstruct the establishment of ballistic extensions of polariton condensates. Here, we propose a novel room-temperature polariton platform with ultralow disorders enabling to ballistic extensions. Hexagonal GaN wires moderates disorders in both photon-perspective and exciton-perspective. This structure allow us to actively control the potential energy and its landscape of room-temperature polartion condensate for the ballistic propagation. The correlation between real- and momentum-space provides strong indication of ballistic propagations.
We present a temperature dependent optical properties of Ge on Si under influence of Si intermixing and a finding on Δ valley emission. Arrhenius analysis reveals that Si intermixing significantly increase the thermal activation energy of direct valley emission by increasing the energy difference between Γ and L valley. A luminescence peak from Δ valley was revealed from the temperature-dependent study. A clear thermal activation of Δ valley could be observed. We also present monolithically integrated strained Ge nano-cavity fabricated on Si for laser application. The cavity is designed to have strain higher than 1 % and Q ~ 100,000.
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