We investigated room temperature detection of terahertz radiation by using two different types of transistors (Strained Silicon Modulation field effect transistor, GaAs PHEMT). Experimental results show a good level of response under excitation at 0.3 THz. Competitive performance parameters were obtained (NEP and responsivity) in comparison with other detectors. Enhancement of the photoresponse signal by imposing a dc drain-to-source current (Ids) was observed experimentally. Inspection of hidden objects by using those devices within a terahertz imaging setup was demonstrated at 300 GHz and a better image was obtained under Ids.
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