Mr. Hideo Nagasaki Profile

Hideo Nagasaki

at FUJIFILM Corp.

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Author

Publications (3)

Proceedings Article | 13 November 2024 Poster

Study of high-contrast PCAR for lithographic performance improvement on EUV blanks

Kei Yamamoto, Kotaro Takahashi, Kazuki Takeda, Hideo Nagasaki, Daisuke Taguchi, Kazunori Ono, Takahiro Hiromatsu, Taku Hirayama

Proceedings Volume 13216, 1321628 (2024) https://doi.org/10.1117/12.3037191

KEYWORDS: Extreme ultraviolet, Lithography, Stochastic processes, Line width roughness, Electron beam lithography, Polymers, Photoresist materials, Electron beams, Chemically amplified resists

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Proceedings Article | 29 September 2023 Paper

Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Kei Yamamoto, Kotaro Takahashi, Hideo Nagasaki, Fumihiro Yoshino, Hiroki Motoyama, Seiji Uno, Shuhei Yamaguchi

Proceedings Volume 12915, 129150B (2023) https://doi.org/10.1117/12.2685159

KEYWORDS: Photoacid generators, Bridges, Lithography, Polymers, Line width roughness, Stochastic processes, Photoresist materials, Semiconducting wafers, Extreme ultraviolet, Photoresist developing

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EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. A novel, high dose, positive-tone chemically amplified resist (pCAR) using PHS (polyhydroxystyrene) based polymer has been developed with improved resolution performance as verified by Point-beam writer and Multi-beam mask writer (MBMW). In this study, several high dissolution contrast pCAR formulations were studied under Point-beam conditions to investigate the impact of the chemical blur and the chemical stochastics on lithographic performance. For suppressing the chemical blur in the pCAR after exposure, formulations using larger size PAG (photo acid generator) could improve the resolution performance due to reduced acid diffusivity. For reducing the chemical stochastics, higher PAG loading pCAR and the low sensitivity pCAR were investigated. Improved resolution and LWR (line width roughness) performances were obtained by these pCAR up to approximately 200μC/cm² under Point-beam condition. On the other hand, the lithographic performance was degraded at 270μC/cm². Analytical results of PAG decomposition ratio by HPLC (high performance liquid chromatography) suggested the possibility that decreased acid concentration gradient could degrade lithographic performance when the pCAR sensitivity is too low. The investigation of different dissolution contrast pCAR showed that higher dissolution contrast pCAR with higher Rmax (maximum dissolution rate) resulted in improved resolution performance. According to this study, efforts to minimize the chemical blur and stochastics, and to maximize the photoresist contrast were the key factors for designing high-performing, low sensitivity pCAR. The verification results of the ultimate resolution of the representative pCAR with 60nm film thickness were also described in this paper under MBMW and mask process conditions. HP (half pitch) 21nm line and space pattern could be resolved without pattern collapse. The small ring pattern with a 10.5nm pattern width was nicely resolved as the smallest feature.

Proceedings Article | 1 December 2022 Presentation + Paper

Study of EB resist dissolution contrast and chemical blur impact on the ultimate resolution

Kei Yamamoto, Kotaro Takahashi, Hideo Nagasaki, Fumihiro Yoshino, Hiroki Motoyama, Seiji Uno, Shuhei Yamaguchi

Proceedings Volume 12293, 122930N (2022) https://doi.org/10.1117/12.2639980

KEYWORDS: Photoacid generators, Lithography, Photomasks, Stochastic processes, Line width roughness, Polymers, Photoresist materials, Chemical analysis, Semiconducting wafers, Extreme ultraviolet

Read Abstract +

EB (electron beam) resist is widely used for the EUV (extreme ultraviolet) mask production. Tighter pitch size and smaller pattern features are required on EUV mask for the next generation EUV patterning. A novel, high dose, positive-tone chemically amplified resist (pCAR) using PHS (polyhydroxystyrene) based polymer has been developed with improved resolution performance as verified by Point-beam writer and Multi-beam mask writer (MBMW). In this study, several high dissolution contrast pCAR formulations were studied under Point-beam conditions to investigate the impact of the chemical blur and the chemical stochastics on lithographic performance. For suppressing the chemical blur in the pCAR after exposure, formulations using larger size PAG (photo acid generator) could improve the resolution performance due to reduced acid diffusivity. For reducing the chemical stochastics, higher PAG loading pCAR and the slower sensitivity pCAR were investigated. Improved resolution and LWR (line width roughness) performances were obtained by these pCAR up to approximately 200μC/cm² under Point-beam condition. On the other hand, the lithographic performance was degraded at 270μC/cm². Analytical results of PAG decomposition ratio by HPLC suggested the possibility that decreased acid generation contrast could degrade lithographic performance when the pCAR sensitivity is too slow. The investigation of different dissolution contrast pCAR showed that higher dissolution contrast pCAR with higher Rmax resulted in improved resolution performance. According to this study, efforts to minimize the chemical blur and stochastics, and to maximize the photoresist contrast were the key factors for designing high-performing, low sensitivity pCAR. The verification results of the ultimate resolution of the representative pCAR with 60nm film thickness were also described in this paper under MBMW and mask process conditions. HP21nm line and space pattern could be resolved without pattern collapse. The small ring pattern with a 10.5nm pattern width was nicely resolved as the smallest feature.

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