Number and size control of InAs quantum dots (QDs) on truncated InP pyramids grown by selective area
Metal Organic Vapor Phase Epitaxy (MOVPE) is reported. The facet composition of the pyramid top surface
and the relative facet sizes are determined by the shape of the pyramid base and the pyramid height for a
certain base size. This allows the precise position and distribution control of the QDs due to preferential
nucleation on the {103} and {115} facets. The size of the QDs is adjusted by the growth parameters, e.g.,
InAs amount and growth rate together with the pyramid top surface size. The QD number, related to the
specific shape of the pyramid top surface, is reduced by the shrinking pyramid top surface size during growth.
Well defined positioning of four, three, two, and single QDs is realized successfully. Regrowth of a passive
InP structure around the pyramids establishes submicrometer-scale active-passive integration for efficient
microcavity QD nanolasers and single photon sources operating in the 1.55-μm telecom wavelength region
and their implementation in photonic integrated circuits.
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