In the past decade, lead halide perovskites have emerged as potential optoelectronic materials in the fields of light-emitting diode, solar cell, photodetector, and laser, due to their low-cost synthesis method, tunable bandgap, high quantum yield, large absorption, gain coefficient, and low trap-state densities. In this review, we present a comprehensive discussion of lead halide perovskite applications, with an emphasis on recent advances in synthetic strategies, morphology control, and lasing performance. In particular, the synthetic strategies of solution and vapor progress and the morphology control of perovskite nanocrystals are reviewed. Furthermore, we systematically discuss the latest development of perovskite laser with various fundamental performances, which are highly dependent on the dimension and size of nanocrystals. Finally, considering current challenges and perspectives on the development of lead halide perovskite nanocrystals, we provide an outlook on achieving high-quality lead perovskite lasers and expanding their practical applications.
UV femtosecond laser pulse was used to excite the ultrafast carrier dynamics inside the Al2O3/SiO2
high reflective mirror. Spectral shift between two different laser induced free electron absorption bands
was observed. The former one centered at 406 nm undergo a fast decay of ~2.6 ps and a longer one of
~15 ps. Accompanied by the fast decay of the first absorption band, a new absorption band centered at
396 nm grew around ~2.8 ps after the laser excitation. The probable explanation the observed spectral
shift of the free electron absorption band is that, the free carrier in the Al3O2 conductive band was
trapped into some kind of defect state, which has an absorption peak at 396 nm, at a time scale of ~2.8
ps. Since the defect state has much longer lifetime than the initial generated free carriers in thee
conductive band, probably under the condition of ultrafast high-frequency pulsed UV laser exposure,
the incubation effect will decrease the laser damage threshold of the subsequent laser pulses.
Using 9 fs UV laser pulses, laser induced ultrafast dynamics in fused silica is investigated in the present study. The free
carrier dynamics under few-cycle UV laser excitation far below laser damage threshold in the fused silica was studied.
After laser excitation, free carrier in the conductive band is found to turn into self-trapped excitons within about 300fs. It
is possible that the trapped exciton will result in the incubation effect under the condition of ultrafast high-frequency
pulsed UV laser exposure.
The laser induced ultrafast dynamics in fused silica under few-cycle UV laser excitation is investigated in the present study. Using sub-10 fs UV laser pulses, we characterize the free carrier dynamics in the fused silica before laser damage. After laser excitation, free carrier in the conductive band is found to turn into self-trapped excitons within about 300fs. It is possible that the trapped exciton will result in the incubation effect under the condition of ultrafast high-frequency pulsed UV laser exposure.
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