Dr. Katsuyoshi Kodera Profile

Dr. Katsuyoshi Kodera

Chief Research Specialist at KIOXIA Corp.

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

Design process integration enabling the productivity enhancement for nanoimprint lithography

Sachiko Kobayashi, Satoshi Mitsugi, Katsuyoshi Kodera, Kazuya Fukuhara, Anupam Mitra, Koki Ueha, Katsuya Abe, Motofumi Komori, Shingo Kanamitsu, Takuya Kono

Proceedings Volume 12052, 1205208 (2022) https://doi.org/10.1117/12.2614319

KEYWORDS: Nanoimprint lithography, Semiconducting wafers, Optical alignment, Optical lithography, Scanning electron microscopy, Ultraviolet radiation, Lithography, Scanning transmission electron microscopy

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Proceedings Article | 19 March 2018 Presentation

Presentation

Defect dynamics in directed self-assembly of block copolymers (Conference Presentation)

Tsukasa Azuma, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsuyoshi Kodera, Ken Miyagi, Masayuki Shiraishi, Ryota Matsuki, Terumasa Kosaka, Toshiyuki Himi, Seiji Nagahara, Alvin Chandra, Ryuichi Nakatani, Teruaki Hayakawa, Kenji Yoshimoto, Takuya Omosu, Mikihito Takenaka

Proceedings Volume 10586, 105860S (2018) https://doi.org/10.1117/12.2297310

KEYWORDS: Directed self assembly, Image processing, Signal processing, Electron beam lithography, Lithography, Annealing, Thin films, Epitaxy, Data modeling, 3D modeling

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Proceedings Article | 13 March 2018 Presentation + Paper

Presentation + Paper

A simulation study on bridge defects in lamellae-forming diblock copolymers

Hironobu Sato, Katsuyoshi Kodera, Yuriko Seino, Yusuke Kasahara, Ken Miyagi, Masayuki Shiraishi, Tsukasa Azuma

Proceedings Volume 10586, 105860U (2018) https://doi.org/10.1117/12.2297287

KEYWORDS: Bridges, Polymethylmethacrylate, Picosecond phenomena, Etching, Molecular bridges, Reactive ion etching, Directed self assembly, Photomasks, Image processing, Chemical analysis

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Proceedings Article | 25 May 2017 Presentation

Presentation

Nano-defect management in directed self-assembly of block copolymers (Conference Presentation)

Tsukasa Azuma, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsuyoshi Kodera, Phubes Jiravanichsakul, Teruaki Hayakawa, Kenji Yoshimoto, Mikihito Takenaka

Proceedings Volume 10146, 101460O (2017) https://doi.org/10.1117/12.2257936

KEYWORDS: Annealing, 3D modeling, Lithography, Optical lithography, Scattering, Atomic force microscopy, Data modeling, Semiconductor manufacturing, Directed self assembly, Materials processing

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Directed self-assembly (DSA) of block copolymers (BCPs) has been expected to become one of the most promising next generation lithography candidates for sub-15 nm line patterning and sub-20 nm contact hole patterning. In order to provide the DSA lithography to practical use in advanced semiconductor device manufacturing, defect mitigation in the DSA materials and processes is the primary challenge. We need to clarify the defect generation mechanism using in-situ measurement of self-assembling processes of BCPs in cooperation with modeling approaches to attain the DSA defect mitigation. In this work, we thus employed in-situ atomic force microscope (AFM) and grazing-incidence small angle X-ray scattering (GI-SAXS) and investigated development of surface morphology as well as internal structure during annealing processes. Figure 1 shows series of the AFM images of PMAPOSS-b-PTFEMA films during annealing processes. The images clearly show that vitrified sponge-like structure without long-range order in as-spun film transforms into lamellar structure and that the long range order of the lamellar structure increases with annealing temperature. It is well-known that ordering processes of BCPs from disordered state in bulk progress via nucleation and growth. In contrary to the case of bulk, the observed processes seem to be spinodal decomposition. This is because the structure in as-spun film is not the concentration fluctuation of disordered state but the vitrified sponge-like structure. The annealing processes induce order-order transition from non-equilibrium ordered-state to the lamellar structure. The surface tension assists the transition and directs the orientation. Figure 2 shows scattering patterns of (a) vicinity of film top and (b) whole sample of the GI-SAXS. We can find vertically oriented lamellar structure in the vicinity of film top while horizontally oriented lamellar structures in the vicinity of film bottom, indicating that the GI-SAXS measurement can clarify the variation of the morphologies in depth direction and that the surface tension affects the orientation of the lamellar structure. Finally a combination of the time development data in the in-situ AFM and the GI-SAXS is used to develop a kinetic modeling for prediction of dynamical change in three-dimensional nano-structures. A part of this work was funded by the New Energy and Industrial Technology Development Organization (NEDO) in Japan under the EIDEC project.

Proceedings Article | 1 April 2016 Paper

Paper

Control of morphological defects at the boundary between the periodic and non-periodic patterns in directed self-assembly process

Akihisa Yoshida, Kenji Yoshimoto, Masahiro Ohshima, Katsuyoshi Kodera, Yoshihiro Naka, Hideki Kanai, Sachiko Kobayashi, Simon Maeda, Phubes Jiravanichsakul, Katsutoshi Kobayashi, Hisako Aoyama

Proceedings Volume 9777, 97771O (2016) https://doi.org/10.1117/12.2218234

KEYWORDS: Polymethylmethacrylate, Scanning electron microscopy, Immersion lithography, Computational modeling, Directed self assembly, Reactive ion etching, Lithography, Silicon, Oxygen

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Proceedings Article | 1 April 2016 Paper

Paper

Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer

Hironobu Sato, Yusuke Kasahara, Naoko Kihara, Yuriko Seino, Ken Miyagi, Shinya Minegishi, Hitoshi Kubota, Katsutoshi Kobayashi, Hideki Kanai, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Masayuki Shiraishi, Hitoshi Yamano, Satoshi Nomura, Tsukasa Azuma, Teruaki Hayakawa

Proceedings Volume 9777, 97771S (2016) https://doi.org/10.1117/12.2218758

KEYWORDS: Molecular self-assembly, Polymers, Etching, Directed self assembly, Transmission electron microscopy, Silicon, Electron microscopes, Surface properties, Lithography, Reactive ion etching

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Proceedings Article | 1 April 2016 Paper

Paper

Sub-10nm lines and spaces patterning using grapho-epitaxial directed self-assembly of lamellar block copolymers

Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Shinya Minegishi, Ken Miyagi, Hitoshi Kubota, Hideki Kanai, Katsuyoshi Kodera, Masayuki Shiraishi, Naoko Kihara, Yoshiaki Kawamonzen, Toshikatsu Tobana, Katsutoshi Kobayashi, Hitoshi Yamano, Tsukasa Azuma, Satoshi Nomura

Proceedings Volume 9777, 97771T (2016) https://doi.org/10.1117/12.2218787

KEYWORDS: Optical lithography, Metals, Photoresist processing, Semiconductor manufacturing, Semiconductors, Manufacturing, Epitaxy, Semiconducting wafers, Scanning electron microscopy, Silica, Directed self assembly, Etching, Photomasks, Electron beam lithography, Chemical mechanical planarization, Reactive ion etching, Metrology, Tin

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Proceedings Article | 23 March 2016 Paper

Paper

Reactive ion etching challenges for half-pitch sub-10-nm line-and-space pattern fabrication using directed self-assembly lithography

Yusuke Kasahara, Yuriko Seino, Hironobu Sato, Hitoshi Kubota, Hideki Kanai, Naoko Kihara, Shinya Minegishi, Ken Miyagi, Toshikatsu Tobana, Masayuki Shiraishi, Katsutoshi Kobayashi, Katsuyoshi Kodera, Hitoshi Yamano, Yoshiaki Kawamonzen, Tsukasa Azuma

Proceedings Volume 9782, 97820P (2016) https://doi.org/10.1117/12.2219081

KEYWORDS: Reactive ion etching, Optical lithography, Polymers, Lithography, Semiconductor manufacturing, Silicon, Metals, Semiconductors, Manufacturing, Directed self assembly, Photomasks, Scanning electron microscopy, Silica, Chemical mechanical planarization

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SPIE Journal Paper | 9 April 2015 Open Access

Open Access

Sub-10-nm patterning process using directed self-assembly with high χ block copolymers

Naoko Kihara, Yuriko Seino, Hironobu Sato, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Hideki Kanai, Yoshiaki Kawamonzen, Katsuyoshi Kodera, Tsukasa Azuma, Teruaki Hayakawa

JM3, Vol. 14, Issue 02, 023502, (April 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.2.023502

KEYWORDS: Etching, Polymethylmethacrylate, Optical lithography, Silicon, Polymers, Lithography, Scanning electron microscopy, Image processing, Polymerization, Directed self assembly

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Proceedings Article | 19 March 2015 Paper

Paper

Directed self-assembly lithography using coordinated line epitaxy (COOL) process

Yuriko Seino, Yusuke Kasahara, Hironobu Sato, Katsutoshi Kobayashi, Hitoshi Kubota, Shinya Minegishi, Ken Miyagi, Hideki Kanai, Katsuyoshi Kodera, Naoko Kihara, Yoshiaki Kawamonzen, Toshikatsu Tobana, Masayuki Shiraishi, Satoshi Nomura, Tsukasa Azuma

Proceedings Volume 9423, 942316 (2015) https://doi.org/10.1117/12.2085697

KEYWORDS: Etching, Picosecond phenomena, Lithography, Semiconducting wafers, Reactive ion etching, Metals, Scanning electron microscopy, Photoresist processing, Optical alignment, Directed self assembly

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Proceedings Article | 17 March 2015 Paper

Paper

RIE challenges for sub-15 nm line-and-space patterning using directed self-assembly lithography with coordinated line epitaxy (COOL) process

Y. Kasahara, Y. Seino, K. Kobayashi, H. Kanai, H. Sato, H. Kubota, T. Tobana, S. Minegishi, K. Miyagi, N. Kihara, K. Kodera, M. Shiraishi, Y. Kawamonzen, S. Nomura, T. Azuma

Proceedings Volume 9428, 94280S (2015) https://doi.org/10.1117/12.2085704

KEYWORDS: Reactive ion etching, Optical lithography, Lithography, Etching, Epitaxy, Picosecond phenomena, Scanning electron microscopy, Silica, Semiconducting wafers, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

Paper

Defect-aware process margin for chemo-epitaxial directed self-assembly lithography using simulation method based on self-consistent field theory

Katsuyoshi Kodera, Hironobu Sato, Hideki Kanai, Yuriko Seino, Naoko Kihara, Yusuke Kasahara, Katsutoshi Kobayashi, Ken Miyagi, Shinya Minegishi, Koichi Yatsuda, Tomoharu Fujiwara, Noriyuki Hirayanagi, Yoshiaki Kawamonzen, Tsukasa Azuma

Proceedings Volume 9049, 904926 (2014) https://doi.org/10.1117/12.2046159

KEYWORDS: Monte Carlo methods, Lithography, Particles, Thin film coatings, Systems modeling, Computer simulations, Image segmentation, Extreme ultraviolet lithography, Semiconductors, Directed self assembly

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Proceedings Article | 12 April 2013 Paper

Paper

Study of recent CFD-based scheme for analyzing 3D mask effects

M. Takahashi, K. Kodera, M. Motokubota, Y. Kawabata, S. Maeda, S. Nojima, S. Tanaka, S. Mimotogi

Proceedings Volume 8683, 86830B (2013) https://doi.org/10.1117/12.2009116

KEYWORDS: Photomasks, Radio propagation, Electromagnetism, Finite-difference time-domain method, Lithography, Wave propagation, Computer simulations, Diffraction, Wavefronts, Phase velocity

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Proceedings Article | 26 March 2013 Paper

Paper

Dissipative particle dynamics simulations to optimize contact hole shrink process using graphoepitaxial directed self-assembly

Hironobu Sato, Hiroki Yonemitsu, Yuriko Seino, Hirokazu Kato, Masahiro Kanno, Katsutoshi Kobayashi, Ayako Kawanishi, Katsuyoshi Kodera, Tsukasa Azuma

Proceedings Volume 8680, 86801K (2013) https://doi.org/10.1117/12.2009622

KEYWORDS: Picosecond phenomena, Polymethylmethacrylate, Lithography, Particles, System on a chip, 193nm lithography, Critical dimension metrology, Semiconductor manufacturing, Computer simulations, Directed self assembly

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Proceedings Article | 26 March 2013 Paper

Paper

Novel error mode analysis method for graphoepitaxial directed self-assembly lithography based on the dissipative particle dynamics method

Katsuyoshi Kodera, Shimon Maeda, Satoshi Tanaka, Shoji Mimotogi, Yuriko Seino, Hiroki Yonemitsu, Hironobu Sato, Tsukasa Azuma

Proceedings Volume 8680, 868015 (2013) https://doi.org/10.1117/12.2011439

KEYWORDS: Particles, Lithography, Critical dimension metrology, Error analysis, Neodymium, Radon, Polymethylmethacrylate, Polymers, Semiconductors, Directed self assembly

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Proceedings Article | 10 March 2010 Paper

Paper

Novel fine-tuned model-based SRAF generation method using coherence map

Katsuyoshi Kodera, Satoshi Tanaka, Mikiyasu Yamaji, Chikaaki Kodama, Toshiya Kotani, Shigeki Nojima, Koji Hashimoto, Shoji Mimotogi, Soichi Inoue

Proceedings Volume 7640, 764017 (2010) https://doi.org/10.1117/12.846322

KEYWORDS: Modulation, SRAF, Photovoltaics, Photomasks, Lithography, Model-based design, Lithographic illumination, Optical proximity correction, Coherence (optics), Fourier transforms

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Proceedings Article | 11 May 2009 Paper

Paper

Lithography compliance check considering neighboring cell structures for robust cell design

Masahiro Miyairi, Shigeki Nojima, Shimon Maeda, Katsuyoshi Kodera, Ryuji Ogawa, Satoshi Tanaka

Proceedings Volume 7379, 737911 (2009) https://doi.org/10.1117/12.824278

KEYWORDS: Lithography, Optical proximity correction, Logic, Metals, Design for manufacturing, Manufacturing, Semiconductors, Semiconducting wafers, Process engineering, Semiconductor manufacturing

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Proceedings Article | 16 March 2009 Paper

Paper

Optimal setting strategy for kernel-based OPC simulation engines

Katsuyoshi Kodera, Satoshi Tanaka, Toshiya Kotani, Soichi Inoue

Proceedings Volume 7274, 727410 (2009) https://doi.org/10.1117/12.814049

KEYWORDS: Optical proximity correction, Photomasks, Point spread functions, Optical simulations, Lithography, Systems modeling, Optics manufacturing, Manufacturing, Semiconductor manufacturing, Semiconductors

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Proceedings Article | 19 May 2008 Paper

Paper

Impact of patterning strategy on mask fabrication beyond 32nm

Shoji Mimotogi, Tomotaka Higaki, Hideki Kanai, Satoshi Tanaka, Masaki Satake, Yosuke Kitamura, Katsuyoshi Kodera, Kazutaka Ishigo, Takuya Kono, Masafumi Asano, Kazuhiro Takahata, Soichi Inoue

Proceedings Volume 7028, 702814 (2008) https://doi.org/10.1117/12.793045

KEYWORDS: Optical lithography, Photomasks, Double patterning technology, Critical dimension metrology, Lithography, Mask making, Logic devices, Optical alignment, Reactive ion etching, Semiconducting wafers

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Proceedings Article | 1 April 2008 Paper

Paper

Patterning strategy and performance of 1.3NA tool for 32nm node lithography

Shoji Mimotogi, Masaki Satake, Yosuke Kitamura, Kazuhiro Takahata, Katsuyoshi Kodera, Hiroharu Fujise, Tatsuhiko Ema, Koutaro Sho, Kazutaka Ishigo, Takuya Kono, Masafumi Asano, Kenji Yoshida, Hideki Kanai, Suigen Kyoh, Hideaki Harakawa, Akiko Nomachi, Tatsuya Ishida, Katsura Miyashita, Soichi Inoue

Proceedings Volume 6924, 69240M (2008) https://doi.org/10.1117/12.772201

KEYWORDS: Lithography, Optical lithography, Scanners, SRAF, Semiconducting wafers, Lithographic illumination, Metals, Photomasks, Semiconductors, Logic devices

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Showing 5 of 20 publications

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