KEYWORDS: 3D metrology, Sensors, Atomic force microscopy, 3D image processing, Scanning electron microscopy, Algorithm development, Photomasks, Metrology, Transmission electron microscopy, Time metrology
In next generation lithography (NGL) for the 1x nm node and beyond, the three dimensional (3D) shape measurements such as side wall angle (SWA) and height of feature on photomask become more critical for the process control. Until today, AFM (Atomic Force Microscope), X-SEM (cross-section Scanning Electron Microscope) and TEM (Transmission Electron Microscope) tools are normally used for 3D measurements, however, these techniques require time-consuming preparation and observation. And both X-SEM and TEM are destructive measurement techniques. This paper presents a technology for quick and non-destructive 3D shape analysis using multi-channel detector MVM-SEM (Multi Vision Metrology SEM), and also reports its accuracy and precision.
Bright-field photomasks are used to print small contact holes via ArF immersion multiple patterning lithography. There
are some technical difficulties when small floating dots are to be measured by SEM tools because of a false imaging
shadow. However, a new scan technology of Multi Vision Metrology SEMTM E3630 presents a solution for this issue. The combination of new scan technology and the other MVM-SEM® functions can provide further extended applications with more accurate measurement results.
The detection and management of mask defects which are transferred onto wafer becomes more important day by day.
As the photomask patterns becomes smaller and more complicated, using Inverse Lithography Technology (ILT) and
Source Mask Optimization (SMO) with Optical Proximity Correction (OPC).
To evaluate photomask quality, the current method uses aerial imaging by optical inspection tools. This technique at
1Xnm node has a resolution limit because small defects will be difficult to detect.
We already reported the MEEF influence of high-end photomask using wide FOV SEM contour data of "E3630
MVM-SEM®" and lithography simulator "TrueMask® DS" of D2S Inc. in the prior paper [1].
In this paper we evaluate the correlation between our evaluation method and optical inspection tools as ongoing
assessment.
Also in order to reduce the defect classification work, we can compose the 3 Dimensional (3D) information of defects
and can judge whether repairs of defects would be required.
Moreover, we confirm the possibility of wafer plane CD measurement based on the combination between E3630
MVM-SEM® and 3D lithography simulation.
KEYWORDS: Scanning electron microscopy, Photomasks, Metrology, Electron beam lithography, Line scan image sensors, Electron beams, Lithography, Semiconductors, Capacitance, Absorption
As an alternative to EUV lithography, ArF immersion multiple patterning lithography has been heavily employed in
semiconductor fabrication. This situation has led to increase use of bright-field photomasks with floating small patterns.
Latest CDSEMs are equipped with various charge compensation features and applicable for devices with conductive
and insulating material. However, there remain some difficulties when floating small patterns are to be measured. One
of the specific examples is a floating dot on a via mask, dimension of which is around 200nm at the 45 nm process
node, scaling down to 100nm at the 22nm process node. Since the dot has very small capacitance, it is easily charged by
electron beam irradiation, and discharged in a short period. This kind of temporary voltage variation can affect the
secondary electron yield, causes degradation of the SEM image contrast. We have analyzed that the "edge effect",
which is the principle of SEM, has a primary role in small dot charging, and interchanging of scan line effectively
suppresses the voltage variation. Based on this concept, we have developed a new scan technology for our "Multi
Vision Metrology SEM" E3630, and improved the performance of image-based measurement. In this paper, the new
scan technology and evaluation results are presented.
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