Ms. Minae Yoo Profile

Minae Yoo

at SK Hynix Inc

SPIE Involvement:

Author

Publications (3)

Proceedings Article | 20 March 2012 Paper

Characteristics analysis of RELACS process from an OPC point of view

Jinyoung Choi, Minae Yoo, Chanha Park, Changil Oh, Cheolkyun Kim, Hyunjo Yang, Donggyu Yim

Proceedings Volume 8325, 83251Z (2012) https://doi.org/10.1117/12.916121

KEYWORDS: Optical proximity correction, Image processing, Lithography, Semiconducting wafers, Photoresist processing, Standards development, Reticles, Resolution enhancement technologies, Scanning electron microscopy, Lithographic illumination

Read Abstract +

There are strong demands for techniques which are able to extend application of ArF immersion lithography. Especially, the leading edge techniques are required to make very small hole patterns below 50nm. Several techniques such as double patterning technique, free-form illumination and resist shrinkage technology are considered as viable candidates. Most of all, NTD (Negative Tone Development) is being regarded as the most promising technology for the realization of small hole patterns When NTD process is applied, hole patterns are defined by island type features on the reticle and consequently its optical performance shows better result compared with PTD (Positive Tone Development) process. However it is still difficult to define extremely small hole patterns below 40nm, new combination process of NTD with RELACS is being introduced to overcome resolution limitation. NTD combined with RELACS, which is the most advanced lithography technology, definitely enable us to generate smaller size hole patterns on the wafer. A chemical shrinkage technology, RELACS (Resolution Enhancement Lithography Assisted by Chemical Shrink), utilizes the cross linking reaction catalyzed by the acid component existing in a predefined resist pattern. In case of PTD combined with RELACS process, we already know that CD change after the shrinkage process is not influenced by duty ratio. So we could easily reflect the RELACS bias to meet the CD target during OPC (Optical Proximity Correction) procedure. But NTD combined with RELACS process was not understood clearly, nor verified. It requires more investigation of physical behavior during combined process in order to define exact hole patterns. The newly introduced process might require additive OPC modeling procedure to satisfy target CD when NTD RELACS bias has different values according to pitch and shape. This study is going to include the investigation on two types of resist shrinkage process, PTD and NTD. The optimized OPC methodology will be discussed through the evaluation on simple array hole patterns and random hole patterns.

Proceedings Article | 16 March 2009 Paper

The analysis of polarization characteristics on 40nm memory devices

Minae Yoo, Chanha Park, Taejun You, Hyunjo Yang, Young-Hong Min, Ki-Yeop Park, Donggyu Yim, Sungki Park

Proceedings Volume 7274, 72742W (2009) https://doi.org/10.1117/12.814087

KEYWORDS: Polarization, Critical dimension metrology, Semiconducting wafers, Lithography, Optical lithography, Resolution enhancement technologies, Polarization control, Fiber optic illuminators, Semiconductors, Metrology

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Resolution enhancement techniques for contact hole printing of sub-50nm memory device

Hye-Jin Shin, Tae-jun You, Min-Ae Yoo, Jin-Young Choi, Kiho Yang, Chan-Ha Park, Dong-gyu Yim

Proceedings Volume 7140, 714034 (2008) https://doi.org/10.1117/12.804646

KEYWORDS: SRAF, Diffractive optical elements, Resolution enhancement technologies, Photoresist processing, Lithography, Printing, Source mask optimization, Fiber optic illuminators, Semiconducting wafers, Optical lithography

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years