KEYWORDS: Extreme ultraviolet lithography, Interferometry, Photomasks, Reticles, Data modeling, 3D modeling, Mathematical modeling, Photography, Image quality, Control systems
Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for Next-Generation Lithography in the sub-45-nm regime. Successful implementation of this technology will depend upon advancements in many areas,
including the quality of the mask system to control image placement errors. For EUVL, the nonflatness of both the
mask and chuck is critical, due to the nontelecentric illumination during exposure. The industry is proposing to use an
electrostatic chuck to support and flatten the mask in the exposure tool. The focus of this research is to investigate the
clamping ability of a pin-type chuck, both experimentally and with the use of numerical simulation tools, i.e., finite
element modeling. A status report on electrostatic chucking is presented, including the results obtained during
repeatability studies and long-term chucking experiments.
According to the International Technology Roadmap for Semiconductors, meeting the strict requirements on image
placement errors in the sub-45-nm regime may be one of the most difficult challenges for the industry. For Extreme
Ultraviolet Lithography (EUVL), the nonflatness of both the mask and chuck is critical as well, due to the
nontelecentric illumination during exposure. To address this issue, SEMI Standards P37 and P40 have established the
specifications on flatness for the EUVL mask substrate and electrostatic chuck. This study investigates the procedures
for implementing the Standards when measuring and characterizing the shapes of these surfaces. Finite element
simulations are used to demonstrate the difficulties in supporting the mask substrate, while ensuring that the measured
flatness is accurate. Additional modeling is performed to illustrate the most appropriate methods of characterizing the
nonflatness of the electrostatic chuck. The results presented will aid in identifying modifications and clarifications that
are needed in the Standards to facilitate the timely development of EUV lithography.
With the stringent requirements on image placement (IP) errors in the sub-65-nm regime, all sources of mask
distortion during fabrication and usage must be minimized or corrected. For extreme ultraviolet lithography, the
nonflatness of the mask is critical as well, due to the nontelecentric illumination during exposure. This paper outlines
a procedure to predict the IP errors induced on the mask during the fabrication processing, e-beam tool chucking, and
exposure tool chucking. Finite element (FE) models are used to simulate the out-of-plane and in-plane distortions at
each load step. The FE results are compiled to produce a set of Correction Tables that can be implemented during e-beam
writing to compensate for these distortions and significantly increase IP accuracy. A previous version of this paper appeared in the Proceedings of the European Mask and Lithography Conference (EMLC), SPIE, 6533, 653314 (2007). The paper has been updated, retitled, and published here as a result of winning the Best Paper Award at the EMLC.
With the stringent requirements on image placement (IP) errors in the sub-65 nm regime, all sources of mask
distortion during fabrication and usage must be minimized or corrected. For extreme ultraviolet lithography, the
nonflatness of the mask is critical as well, due to the nontelecentric illumination during exposure. This paper outlines
a procedure to predict the IP errors induced on the mask during the fabrication processing, e-beam tool chucking, and
exposure tool chucking. Finite element (FE) models are used to simulate the out-of-plane and in-plane distortions at
each loading step. The FE results are compiled to produce a set of Correction Tables that can be implemented during
e-beam writing to compensate for these distortions and significantly increase IP accuracy.
Characterizing the effect of electrostatic chucking on the flatness of Extreme Ultraviolet Lithography (EUVL) reticles is
necessary for the implementation of EUVL for the sub-32 nm node. In this research, finite element (FE) models have
been developed to predict the flatness of reticles when clamped by a bipolar Coulombic pin chuck. Nonflatness
measurements of the reticle and chuck surfaces were used to create the model geometry. Chucking was then simulated
by applying forces consistent with the pin chuck under consideration. The effect of the nonuniformity of electrostatic
forces due to the presence of gaps between the chuck and reticle backside surfaces was also included. The model
predictions of the final pattern surface shape of the chucked reticle have been verified with chucking experiments and
the results have established the validity of the models. Parametric studies with varying reticle shape, chuck shape, chuck
geometry, and chucking pressure performed using FE modeling techniques are extremely useful in the development of
SEMI standards for EUVL.
Stringent flatness requirements have been imposed for the front and back surfaces of extreme ultraviolet
lithography masks to ensure successful pattern transfer within the image placement error budget. During exposure, an
electrostatic chuck will be used to support and flatten the mask. It is therefore critical that the electrostatic chucking
process and its effect on mask flatness be well-understood. The current research is focused on the characterization of
various aspects of electrostatic chucking through advanced finite element (FE) models and experiments. FE models that
use flatness measurements of the mask and the chuck to predict the final flatness of the pattern surface have been
developed. Pressure was applied between the reticle and chuck to simulate electrostatic clamping. The modeling results
are compared to experimental data obtained using a bipolar Coulombic pin chuck. Electrostatic chucking experiments
were performed in a cleanroom, within a vacuum chamber mounted on a vibration isolation cradle, to minimize the
effects of particles, humidity, and static charges. During these experiments, the chuck was supported on a 3-point
mount; the reticle was placed on the chuck with the backside in contact with the chucking surface and the voltage was
applied. A Zygo interferometer was used to measure the flatness of the reticle before and after chucking. The FE
models and experiments provide insight into the electrostatic chucking process which will expedite the design of
electrostatic chucks and the development of the SEMI standards.
Extreme Ultraviolet Lithography (EUVL) is one of the leading candidates for Next-Generation Lithography in the sub-45-nm regime. One of the key components in the development of EUVL is understanding and characterizing the response of the mask when it is electrostatically chucked in the exposure tool. In this study, finite element (FE) models have been developed to simulate the reticle / chuck system under typical exposure conditions. FE simulations are used to illustrate (a) the effects of the nonflatness of the reticle and chuck, (b) the image placement errors induced by back-side particulates, (c) the influence of the coefficient of friction between the reticle and chuck during exposure scanning, and (d) the effects of contact conductance on the thermomechanical response of the reticle. The focus of this paper is to illustrate that mechanical modeling and simulation has now become a fundamental tool in the design of electrostatic pin chucks for the EUVL technology.
Extreme ultraviolet (EUV) masks and mask chucks require extreme flatness in order to meet the performance and timing specified by the International Technology Roadmap for Semiconductors (ITRS). The EUVL Mask and Chucking Standards, SEMI P37 and SEMI P40, specify the nonflatness of the mask frontside and backside, as well as the chucking surface, to be no more than 50 nm peak-to-valley (p-v). Understanding and characterizing the clamping ability of the electrostatic chuck and its effect on the mask flatness is a critical issue. In the present study, chucking experiments were performed using an electrostatic pin chuck and finite element (FE) models were developed to simulate the chucking.
The frontside and backside surface flatness of several EUV substrates were measured using a Zygo large-area interferometer. Flatness data for the electrostatic chuck was also obtained and this data along with the substrate flatness data was used as the input for the FE modeling. Data from one substrate was selected for modeling and testing and is included in this paper. Electrostatic chucking experiments were conducted in a clean-room facility to minimize contamination due to particles. The substrate was chucked using an electrostatic pin chuck and the measured flatness was compared to the predictions obtained from the FE simulation.
Successful implementation of Extreme Ultraviolet Lithography (EUVL) depends on advancements in many areas, including the quality of the mask and chuck system to control image placement (IP) errors. One source of IP error is the height variations of the patterned mask surface (i.e., its nonflatness). The SEMI EUVL mask and chucking standards (SEMI P37 and SEMI P40) describe stringent requirements for the nonflatness of the mask frontside and backside, and the chucking surfaces. Understanding and characterizing the clamping ability of the electrostatic chuck and the effect on the mask flatness is therefore critical in order to meet these requirements. Legendre polynomials have been identified as an effective and efficient means of representing EUVL mask surface shapes. Finite element (FE) models have been developed to utilize the Legendre coefficients (obtained from measured mask and chuck data) as input data to define the surfaces of the mask and the chuck. The FE models are then used to determine the clamping response of the mask and the resulting flatness of the pattern surface. The sum of the mask thickness nonuniformity and the chuck surface shape has a dominant effect on the flatness of the patterned surface after chucking. The focus of the present research is a comprehensive analysis of the flatness and interaction between the nonflat chuck and the mask. Experiments will be conducted using several sample masks chucked by a slab type electrostatic chuck. Results from the study will support and facilitate the timely development of EUVL mask/chuck systems which meet required specifications.
The challenges in fabricating next-generation lithography (NGL) masks are distinct from those encountered in optical technology. The masks for electron proximity lithography, as well as those for ion and electron projection, use freestanding membranes incorporating layers that are different from the traditional chrome-on-glass photomask blanks. As a promising NGL technology, low-energy electron-beam proximity-projection lithography (LEEPL) will be subject to strict error budgets, requiring high pattern placement accuracy. Meeting these stringent conditions will necessitate an optimization of the design parameters involved in the mask fabrication process. Consequently, comprehensive simulations can be used to characterize the sources of the mechanical distortions induced in LEEPL masks during fabrication, pattern transfer, and mounting. For this purpose, finite element (FE) structural models have been developed to identify the response of the LEEPL mask during fabrication and chucking. Membrane prestress, which is used as input in the FE models, was measured on a 200-mm test mask and found to low in magnitude with excellent cross-mask uniformity. The numerical models were also validated both analytically and experimentally considering intrinsic and extrinsic loading of the mask. Finally, simulations were performed to predict the response of the LEEPL mask during electrostatic chucking. FE results indicate that the mask structure is sufficiently stiff to remain relatively flat under gravitational loadings. The results illustrate that mechanical modeling and simulation can facilitate the timely and cost-effective implementation of the LEEPL technology.
Environmental and operational variability due to changes in the excitation or any other variable can mimic or altogether obscure evidence of structural defects in measured data leading to false positive/negative diagnoses of damage and conservative/tolerant predictions of remaining useful life in structural health monitoring system. Diagnostic and prognostic errors like these in many types of commercial and defense-related applications must be eliminated if health monitoring is to be widely implemented in these applications. A theoretical framework of "dynamic similiarity" in which two sets of mathematical operators are utilized in one system/data model to distinguish damage from nonlinear, time-varying and stochastic events in the measured data is discussed in this paper. Because structural damage initiation, evolution and accumulation are nonlinear processes, the challenge here is to distinguish damage from nonlinear, time-varying and stochastic events in the measured data is discussed in this paper. Because structural damage initiation, evolution and accumulation are nonlinear processes, the challenge here is to distinguish abnormal from normal nonlinear dynamics, which are accentuated by physically or statistically non-stationary events in the operating environment. After discussing several examples of structural diagnosis and prognosis involving dynamic similarity, a simplifeid numerical finite element model of a helicopter blade with time-varying flexural stiffness on a nonlinear aerodynamic elastic foundation that is subjected to a stochastic base excitation is utilized to introduce and examine the effects of dynamic similarity on health monitoring systems. It is shown that environmental variability can be distinguished from structural damage using a physics-based model in conjunction with the dynamic similarity operators to develop more robust damage detection algorithms, which may prove to be more accurate and precise when operating conditions fluctuate.
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