A polarization-selective uncooled infrared (IR) sensor was developed based on an asymmetric two-dimensional plasmonic absorber (2-D PLA). The 2-D PLA has an Au-based 2-D periodic dimple structure, where photons can be manipulated by spoof surface plasmon polaritons. Asymmetry was introduced into the 2-D PLA to realize a polarization selective function. Numerical investigations demonstrate that a 2-D PLA with ellipsoidal dimples (2-D PLA-E) gives rise to polarization-dependent absorption properties due to the asymmetric dimple shape. A microelectromechanical systems-based uncooled IR sensor was fabricated using a 2-D PLA-E through complementary metal oxide semiconductor (CMOS) and micromachining techniques. The 2-D PLA-E was formed with an Au layer sputtered on a SiO2 layer with ellipsoidal holes. The dependence of the responsivity on the polarization indicates that the responsivity is selectively enhanced according to the polarization and the asymmetry of the ellipsoids. The results provide direct evidence that a polarization-selective uncooled IR sensor can be realized simply by the introduction of asymmetry to the surface structure of the 2-D PLA, without the need for a polarizer or optical resonant structures. In addition, a pixel array where each pixel has a different detection polarization could be developed for polarimetric imaging using standard CMOS and micromachining techniques.
A polarization-selective uncooled infrared (IR) sensor has been developed based on an asymmetric two-dimensional plasmonic absorber (2-D PLA). The 2-D PLA has a Au-based 2-D periodic dimple structure, where photons can be manipulated by spoof surface plasmon polaritons. Asymmetry was introduced into the 2-D PLA to realize a polarization selective function. Numerical investigations demonstrate that a 2-D PLA with ellipsoidal dimples (2-D PLA-E) gives rise to polarization-dependent absorption properties due to the asymmetric dimple shape. A microelectromechanical systems-based uncooled IR sensor was fabricated using a 2-D PLA-E through a complementary metal oxide semiconductor (CMOS) and micromachining techniques. The 2-D PLA-E was formed by a Au layer sputtered on a SiO2 layer with ellipsoidal holes. An Al layer was then introduced on the backside of the 2-D PLA-E to reflect scattered light and prevent absorption at the SiO2 substrate. Measurement of the responsivity dependence on the polarization shows that the responsivity is selectively enhanced depending on the polarization and the asymmetry of the ellipse. The results provide direct evidence that a polarization-selective uncooled IR sensor can be realized simply by introducing asymmetry to the surface structure of a 2-D PLA without any polarizer or optical resonant structures. In addition, a pixel array where each pixel has a different detection polarization could be developed for polarimetric imaging using standard CMOS and micromachining techniques.
A wavelength selective wideband uncooled infrared (IR) sensor that detects middle-wavelength and long-wavelength IR (MWIR and LWIR) regions has been developed using a two-dimensional plasmonic absorber (2-D PLA). The 2-D PLA has a Au-based 2-D periodic dimple-array structure, where photons can be manipulated using a spoof surface plasmon. Numerical investigations demonstrate that the absorption wavelength can be designed according to the surface period of dimples over a wide wavelength range (MWIR and LWIR regions). A microelectromechanical system-based uncooled IR sensor with a 2-D PLA was fabricated using complementary metal oxide semiconductor and micromachining techniques. Measurement of the spectral responsivity shows that the selective enhancement of responsivity is achieved over both MWIR and LWIR regions, where the wavelength of the responsivity peak coincides with the dimple period of the 2-D PLA. The results provide direct evidence that a wideband wavelength selective IR sensor can be realized simply by design of the 2-D PLA surface structure without the need for vertical control in terms of gap or thickness. A pixel array where each pixel has a different detection wavelength could be developed for multicolor IR imaging.
A wavelength selective wideband uncooled infrared (IR) sensor that detects middle-wavelength and long-wavelength
infrared (MWIR and LWIR) regions has been developed using a two-dimensional plasmonic absorber (2D PLA). The
2D PLA has a Au-based 2D periodic hole-array structure, where photons can be manipulated using the surface plasmonlike
mode. Numerical investigations demonstrate that the wavelength of the absorption can be designed according to the
surface period of holes over a wide wavelength range (MWIR and LWIR regions). A microelectromechanical system
(MEMS)-based uncooled IR sensor with a 2D PLA was fabricated using complementary metal oxide semiconductor
(CMOS) and micromachining techniques. The 2D PLA was formed from a Au layer sputtered on a perforated oxide
layer. A reflection layer was introduced to the backside of the 2D PLA to prevent additional absorption. Measurement of
the spectral responsivity shows that selective enhancement of responsivity is achieved over both MWIR and LWIR
regions, where the wavelength of the responsivity peak coincides with the hole period of the 2D PLA. The results
obtained here provide direct evidence that a wideband wavelength selective IR sensor can be realized simply by design
of the 2D PLA surface structure without the need for vertical control in terms of gap or thickness. A pixel array where
each pixel has a different detection wavelength would be developed for multicolor infrared imaging using standard
CMOS and micromachining techniques.
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