We have numerically examined the advantages of thickness- and composition-grading of the electron blocking layer (EBL) in InGaN multiquantum well light-emitting diodes. We have enhanced the hole confinement inside the active region, which is critical in GaN-based devices. Low hole injection is more severe when conventional wide bandgap AlGaN EBL is inserted between the last GaN quantum barrier and the p-GaN layer. The results obtained show reduced valence band offset leading to improved hole injection and enhanced device performance.
In this work, we have analyzed the behavior of optoelectronic characteristics i.e. internal quantum efficiency (IQE) by the influence of piezoelectric field. This effect was not considered in widely reported models such as the Standard ABC model, Rate equation model, and phase-space-filling model. In Gallium Nitride (GaN)-based light-emitting diodes (LEDs), the active region is comprised of InGaN/GaN layers. For the emission of green light, high composition of indium is needed in InGaN layer. As a result, the lattice mismatch between GaN and InGaN layer is highly dominated, which leads to strong piezoelectric field. Our proposed calculation by including piezoelectric field shows better agreement with the experimental IQE of green LED. Meanwhile, we have proposed a single quantum well (SQW) device structure with reduced piezoelectric field as compared to the conventional structure.
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