The introduction of EUV lithography into the semiconductor fabrication process will enable a continuation
of Moore's law below the 22 nm technology node. EUV lithography will, however, introduce new and
unwanted sources of patterning distortions which must be accurately modeled and corrected on the
reticle. Flare caused by scattered light in the projection optics is expected to result in several nanometers of
on-wafer dimensional variation, if left uncorrected. Previous work by the authors has focused on
combinations of model-based and rules-based approaches to modeling and correction of flare in EUV
lithography. Current work to be presented here focuses on the development of an all model-based approach
to compensation of both flare and proximity effects in EUV lithography. The advantages of such an
approach in terms of both model and OPC accuracy will be discussed. In addition, the authors will discuss
the benefits and tradeoffs associated with hybrid OPC approaches which mix both rules-based and modelbased
OPC. The tradeoffs to be explored include correction time, accuracy, and data volume.
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