We developed a Finite-Difference Time Domain (FDTD) Method based simulator that can analyze Dual-Layered phase-change disc structure. Because of a substrate thickness error, it is necessary to consider spherical aberration. The electric field distributions have been calcuated on Single-Layered and Dual-Layered phase-change discs. We found differences between the electic distributions focused on a groove and on a land. These calculation results can explain the corresponding experimental results clearly.
We have developed phase change media of 20GB user data capacity for the next generation optical recording system using a blue-violet laser diode with the wavelength of 405nm. An objective lens with the numerical aperture of 0.65 has been used along with mm-thick substrates on which the laser is incident. We have employed the land and groove recording. A transparent film with high thermal conductivity has been adopted at the light incident side of the recording layer in order to improve the carrier to noise ratio and the erase ratio as well as to reduce the cross-erase. Bottom channel bit error rate of less than 1×10-6 has been obtained and its wide tilt margins have successfully demonstrated the strong feasibility for the next generation rewritable system.
We have investigated the recording characteristics of the dual-layer phase change recording media for the sysetm with the NA of 0.65, the wavelength of 405 nm, and the light incidence on 0.6-mm-thick substrate having the land and groove format. For both L0 and L1 of the dual-layer disc, we have adopted bismuth substituted pseudo-binary GeSbTe alloy film as the recording layer and a novel interface layer material in order to improve overwriting characteristics. Bit error rate measurements have successfully demonstrated the feasibility of the user capacity of 36GB and confirmed 30GB with tilt margins.
KEYWORDS: Diffusion, Solids, Electrodes, Polymers, Information operations, Photorefractive polymers, Monte Carlo methods, Protactinium, Time metrology, Molecules
A new easy method for obtaining a drift mobility and a diffusion coefficient from a nondispersive time-of-flight transient has been developed. Nondispersive transients are described well in the theoretical photocurrent equation (PTE) based on the fact that a carrier packet drifts at a constant velocity and is spread by diffusion, the top electrode acts as a reflecting and partially absorbing wall, and the counter electrode acts as an absorbing wall. The fitting of the PTE to photocurrent transients gives the mobility and the diffusion coefficient (D) simultaneously. These are suitable characteristic values for descriptions of carriers transport because they do not show the thickness dependence and the negative field dependence in a low electric field. The mobility that sometimes shows the thickness dependence and the negative field dependence in a low electric field, however, has usually been measured from the time of the intersection of the asymptotes to the plateau and trailing edge of the transients. In order to obtain (mu) a from photocurrent transients by a simple method, we have tried to describe t0 and tail-broadening parameter W as functions of (mu) a and D, where W is defined as (t1/2 - t0)/t1/2 and t1/2 is the time at which the current is a half of that in the plateau region. The dependences of calculated (mu) k and W on the electric field and the sample thickness agreed well with those of the experimental data. These results verify the PTE and suggest that (mu) a and D can be calculated from t0 and W. We also report that the diffusion coefficient is proportional to the power of 2 of the mobility. This result agrees with a theory based on the Langevin equation which describes motions of carriers in a fluctuated field.
KEYWORDS: Code division multiplexing, Polymers, 3D modeling, Molecules, Gadolinium, Statistical analysis, Instrument modeling, Information operations, Dielectrics, Monte Carlo methods
The proportionality of the logarithm of the mobility to the square root of the electric field is most likely caused by the broadening of the density of states according to both the Gaussian disorder model and the 3D correlated disorder model (CDM). Using these models, the relation between the slope of the mobility against the electric field and the dipolar component of the width of the density of states ((sigma) d) is analyzed. The (sigma) d for the donor and the host polymer are calculated using the dipolar disorder model in which a random distribution of permanent dipoles generates fluctuation in electric potential. A successful interpretation of the relation between (beta) and (sigma) d has been achieved using the formula based on the CDM. Assuming that all components of the density of states are described using Gaussian statistics, the van der Waals component is evaluated to be negligibly small from analyses of temperature dependence of the relation between (beta) and (sigma) d. The experimental results also shows that the value of the DOS width that is derived from the analysis of the temperature dependence of the zero-field mobility is different for the value of the DOS width that is derived from the analysis of the electric field dependence.
Saiwai-ku, Kawasaki 210-8582, JAPAN The drift mobility and the diffusion coefficient of molecularly doped polymers (MDPs) are measured by fitting the theoretical equation to the observed time—of—flight photocurrent transient. The 70% mobility enhancement is observed when 0.2 wt.% fullerene C70 is added to the diphenylamino— benzaldehyde diphenyl hydrazone (DPH) doped polystyrene. We consider this is due to the interaction between C0 and DPH which form the charge transfer complex.
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