Mr. Vincent Shu Profile

Vincent Shu

at ASML

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Author

Publications (4)

Proceedings Article | 20 September 2020 Presentation

Free form data reduction for MPC

Dai Tsunoda, Yasuaki Horima, Yohei Torigoe, Brian Dillon, Adam Lyons, Tom Wallow, Kurt Wampler, Vincent Shu, Quan Zhang

Proceedings Volume 11518, 115180P (2020) https://doi.org/10.1117/12.2573132

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Device simulation, Semiconducting wafers, Optical simulations

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Proceedings Article | 20 March 2018 Presentation + Paper

Efficient full-chip SRAF placement using machine learning for best accuracy and improved consistency

Shibing Wang, Stanislas Baron, Nishrin Kachwala, Chidam Kallingal, Dezheng Sun, Vincent Shu, Weichun Fong, Zero Li, Ahmad Elsaid, Jin-Wei Gao, Jing Su, Jung-Hoon Ser, Quan Zhang, Been-Der Chen, Rafael Howell, Stephen Hsu, Larry Luo, Yi Zou, Gary Zhang, Yen-Wen Lu, Yu Cao

Proceedings Volume 10587, 105870N (2018) https://doi.org/10.1117/12.2299421

KEYWORDS: SRAF, Machine learning, Optical proximity correction, Photomasks, Lithography, Model-based design, Source mask optimization, Computational lithography, Image processing

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Various computational approaches from rule-based to model-based methods exist to place Sub-Resolution Assist Features (SRAF) in order to increase process window for lithography. Each method has its advantages and drawbacks, and typically requires the user to make a trade-off between time of development, accuracy, consistency and cycle time.

Rule-based methods, used since the 90 nm node, require long development time and struggle to achieve good process window performance for complex patterns. Heuristically driven, their development is often iterative and involves significant engineering time from multiple disciplines (Litho, OPC and DTCO).

Model-based approaches have been widely adopted since the 20 nm node. While the development of model-driven placement methods is relatively straightforward, they often become computationally expensive when high accuracy is required. Furthermore these methods tend to yield less consistent SRAFs due to the nature of the approach: they rely on a model which is sensitive to the pattern placement on the native simulation grid, and can be impacted by such related grid dependency effects. Those undesirable effects tend to become stronger when more iterations or complexity are needed in the algorithm to achieve required accuracy.

ASML Brion has developed a new SRAF placement technique on the Tachyon platform that is assisted by machine learning and significantly improves the accuracy of full chip SRAF placement while keeping consistency and runtime under control. A Deep Convolutional Neural Network (DCNN) is trained using the target wafer layout and corresponding Continuous Transmission Mask (CTM) images. These CTM images have been fully optimized using the Tachyon inverse mask optimization engine. The neural network generated SRAF guidance map is then used to place SRAF on full-chip. This is different from our existing full-chip MB-SRAF approach which utilizes a SRAF guidance map (SGM) of mask sensitivity to improve the contrast of optical image at the target pattern edges.

In this paper, we demonstrate that machine learning assisted SRAF placement can achieve a superior process window compared to the SGM model-based SRAF method, while keeping the full-chip runtime affordable, and maintain consistency of SRAF placement . We describe the current status of this machine learning assisted SRAF technique and demonstrate its application to full chip mask synthesis and discuss how it can extend the computational lithography roadmap.

Proceedings Article | 16 October 2017 Presentation + Paper

Manufacturing challenges for curvilinear masks

Chris Spence, Quan Zhang, Vincent Shu, Been-Der Chen, Stanislas Baron, Yasuko Saito, Masakazu Hamaji, Yasuaki Horima, Shuichiro Ohara

Proceedings Volume 10451, 1045104 (2017) https://doi.org/10.1117/12.2280470

KEYWORDS: Photomasks, Optical proximity correction, Lithography, SRAF, Mask making, Process modeling

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Proceedings Article | 31 March 2014 Paper

Process window enhancement using advanced RET techniques for 20nm contact layer

Yang Ping, Sarah McGowan, Ying Gong, Yee Mei Foong, Jian Liu, Jianhong Qiu, Vincent Shu, Bo Yan, Jun Ye, Pengcheng Li, Hui Zhou, Taksh Pandey, Jiao Liang, Chris Aquino, Stanislas Baron, Sanjay Kapasi

Proceedings Volume 9052, 90521N (2014) https://doi.org/10.1117/12.2048513

KEYWORDS: Optical proximity correction, SRAF, Source mask optimization, Resolution enhancement technologies, Molybdenum, Photomasks, Electroluminescence, Astatine, Printing, Neodymium

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