This paper summarizes the research progress of SiGe preparation technology at home and abroad, summarizes the advantages and disadvantages of low-voltage silicon epitaxy and molecular beam epitaxy, and discusses the applications of SiGe Heterojunction materials in pin, APD and waveguide laser detectors. Based on the development of black silicon preparation technology at home and abroad, femtosecond laser, wet etching and dry etching are discussed, and their applications in laser detectors are reviewed. Finally, the development prospects of the two materials and their application prospects are summarized and prospected, and the follow-up development direction is given.
To realize the near-infrared detection of silicon-based detectors and avoid the incompatibility between III-V photodetectors and silicon-based integrated circuits, the development of Ge/Si detectors has become a research hotspot, with the breakthrough of preparation technology of Ge / Si heterojunction materials. In this paper, the research progress of Ge / Si heterojunction photodetectors in the wavelength range of 1.1μm to 1.6μm is summarized from the aspects of the device structure, working principle, the current situation at home and abroad, the advantages and disadvantages, and so on.
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