For the requirements of high efficiency of communications satellite on solid state power amplifier in the broadband. In this paper, a power amplifier works in 3.7-4.2GHz using gallium nitride (GaN) based high electron mobility transistor (HEMT) for satellite application was presented. The test results show that in the 3. 7-4. 2 GHz frequency range, under the conditions of the drain voltage of 28 V, the gate voltage of -2.8 V and continuous wave, the saturated output power and drain efficiency of the designed amplifier in this paper are above 40.02 dBm and 59.6% respectively.
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