High power laser diode array with an emission wavelength of 1064nm is presented. The epitaxial structure is an
InGaAs/GaAsP strained-compensated single-quantum well structure. The modules CW output power can reach to 56.5W
at current of 80A. Because the heat capacity of st rather shorter pulse duration and lower duty cycle, the average driving
power in the laser chip is quite low, so the heating effect cemiconductor laser is very small, using pulse injection can
reduce temperature rising significantly. Aould be neglected. The definite relation between lasing wavelength and chip
temperature is developed. The temperature drift coefficient is 0. 45nm/ K
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