The Eu-doped SiOC films were prepared by magnetron sputtering technique at a low temperature of 250°C. The effects of the Eu2O3 deposited power and post-thermal annealing temperature on the PL characteristics of the Eu-doped SiOC films were investigated. It is found that the photoluminescence intensity could be enhanced by more than tenfold by increasing the Eu2O3 deposited power from 20W to 80W. Furthermore, very bright blue light emission can be clearly observed with the naked eye in a bright room for the Eu-doped SiOC films prepared at a Eu2O3 deposited power of 80 W. The improved PL intensity is attributed to the increasing number density of europium silicate clusters as a result of the increasing Eu2O3 deposited power as well as high annealing temperatures.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.